Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08)
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Single crystals of Pb1−x Snx Te (0.06<x<0.08) have been grown by using an ingot-nucleation technique from a Te-rich source. The as-grown crystals have a p-type carrier concentration around 1019 cm−3 and dislocation density as low as 103 cm−2. Diode lasers fabricated from these crystals have contact resistances of 2×10−5 Ω-cm2 and a single-mode single-ended output power of 750 μW at heat sink temperatures around 15 K.
Key wordsPb1−x Snx Te Te-rich crystal growth diode lasers contact resistance dislocations
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- 3.J. F. Butler and C. Simpson, 1973 International Electron Device Meeting Suppl. to Technical Digest, p. 7, (1973).Google Scholar
- 4.E. D. Hinkley, “Development and Application of Tunable Diode Lasers to the Detection and Quantitative Evaluation of Pollutant Gases,” Final Technical Report prepared for the Environmental Protection Agency under Electronic Systems Division Contract F19628-70-C-0230 by MIT Lincoln Laboratory, 30 Sept. 1971.Google Scholar
- 8.T. C. Harman, J. Nonmetals1, 183 (1973).Google Scholar