Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08)
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Single crystals of Pb1−x Snx Te (0.06<x<0.08) have been grown by using an ingot-nucleation technique from a Te-rich source. The as-grown crystals have a p-type carrier concentration around 1019 cm−3 and dislocation density as low as 103 cm−2. Diode lasers fabricated from these crystals have contact resistances of 2×10−5 Ω-cm2 and a single-mode single-ended output power of 750 μW at heat sink temperatures around 15 K.
Key wordsPb1−x Snx Te Te-rich crystal growth diode lasers contact resistance dislocations
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