Journal of Electronic Materials

, Volume 6, Issue 1, pp 39–48 | Cite as

Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08)

  • Wayne Lo


Single crystals of Pb1−x Snx Te (0.06<x<0.08) have been grown by using an ingot-nucleation technique from a Te-rich source. The as-grown crystals have a p-type carrier concentration around 1019 cm−3 and dislocation density as low as 103 cm−2. Diode lasers fabricated from these crystals have contact resistances of 2×10−5 Ω-cm2 and a single-mode single-ended output power of 750 μW at heat sink temperatures around 15 K.

Key words

Pb1−x Snx Te Te-rich crystal growth diode lasers contact resistance dislocations 


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Copyright information

© American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc 1977

Authors and Affiliations

  • Wayne Lo
    • 1
  1. 1.Research LaboratoriesGeneral Motors CorporationWarren

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