Journal of Electronic Materials

, Volume 24, Issue 5, pp 475–481 | Cite as

Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001)

  • Y. P. Chen
  • J. P. Faurie
  • S. Sivananthan
  • G. C. Hua
  • N. Otsuka
Article

Abstract

CdTe(lll)B layers have been grown on misoriented Si(001). Twin formation inside CdTe(lll)B layer is very sensitive to the substrate tilt direction. When Si(001) is tilted toward [110] or [100], a fully twinned layer is obtained. When Si(001) is tilted toward a direction significantly away from [110], a twin-free layer is obtained. Microtwins inside the CdTe(111)B layers are overwhelmingly dominated by the lamellar twins. CdTe(111)B layers always start with heavily lamellar twinning. For twin-free layers, the lamellar twins are gradually suppressed and give way to twin-free CdTe(111)B layer. The major driving forces for suppressing the lamellar twinning are the preferential orientation of CdTe[11-2] along Si[1-10] and lattice relaxation. Such preferential orientation is found to exist for the CdTe(111)B layers grown on Si(001) tilted toward a direction between [110] and [100].

Keywords:

CdTe/Si Heteroepitaxy Molecular beam epitaxy (MBE) Twinning 

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Copyright information

© The Metallurgical of Society of AIME 1995

Authors and Affiliations

  • Y. P. Chen
    • 1
  • J. P. Faurie
    • 1
  • S. Sivananthan
    • 1
  • G. C. Hua
    • 2
  • N. Otsuka
    • 2
  1. 1.Physics Department (M/C 273)University of Illinois at Chicago, Microphysics LaboratoryChicago
  2. 2.School of Materials EngineeringPurdue UniversityWest Lafayette

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