Journal of Electronic Materials

, Volume 20, Issue 4, pp 295–297 | Cite as

Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes

  • J. P. R. David
  • R. Grey
  • M. A. Pate
  • P. A. Claxton
  • J. Woodhead
Article

Abstract

A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures (< 2 × 10−4 A/cm2 @ 0.9 VBD) with a high degree of strain (∼2%) have been produced. An important factor affecting the leakage for a fixed well composition and dimension is found to be the barrier width.

Kew words

III-V Semiconductors strained layer semiconductors diode leakage currents 

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Copyright information

© TMS 1991

Authors and Affiliations

  • J. P. R. David
    • 1
  • R. Grey
    • 1
  • M. A. Pate
    • 1
  • P. A. Claxton
    • 1
  • J. Woodhead
    • 1
  1. 1.Department of Electronic & Electrical EngineeringUniversity of SheffieldSheffieldUK

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