Journal of Electronic Materials

, Volume 4, Issue 1, pp 119–129

Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies

  • C. P. Wen
  • Y. S. Chiang
  • E. J. Denlinger
Article

DOI: 10.1007/BF02657840

Cite this article as:
Wen, C.P., Chiang, Y.S. & Denlinger, E.J. JEM (1975) 4: 119. doi:10.1007/BF02657840

Abstract

Complementary (N+PP+) and double-drift (N+NPP+) silicon IMPATT diodes were prepared and investigated as oscillators in the millimeter-wave frequency region of 50 to 70 GHz. All the diodes were fabricated from multi-layer epitaxially grown silicon structures. A maximum CW output power level of 198 mW at 62.9 GHz and a maximum conversion efficiency of 7.3% have been measured for the complementary diodes. The double-drift IMPATT diodes have a maximum CW output power of 400 mW at 56.3 GHz and a maximum conversion efficiency of 8.5%.

Key words

Silicon IMPATT diodes Silicon epitaxy mm-wave diodes Microwave semiconductor devices 

Copyright information

© American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc 1975

Authors and Affiliations

  • C. P. Wen
    • 1
  • Y. S. Chiang
    • 1
  • E. J. Denlinger
    • 1
  1. 1.RCA LaboratoriesPrinceton
  2. 2.Science CenterRockwell InternationalThousand Oaks

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