Journal of Electronic Materials

, Volume 30, Issue 8, pp 907–910

Water bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

  • R. H. Horng
  • D. S. Wuu
  • C. H. Seieh
  • W. C. Peng
  • M. F. Huang
  • S. J. Tsal
  • J. S. Liu
Special Issue Paper

Abstract

The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

Key words

Wafer bonding AlGaInP mirror substrates light-emitting diode (LED) 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 2001

Authors and Affiliations

  • R. H. Horng
    • 1
  • D. S. Wuu
    • 2
  • C. H. Seieh
    • 2
    • 3
  • W. C. Peng
    • 2
  • M. F. Huang
    • 3
  • S. J. Tsal
    • 3
  • J. S. Liu
    • 3
  1. 1.Institute of Precision EngineeringNational Chung Hsing UniversityTaichungTaiwan ROC
  2. 2.Institute of Electrical EngineeringDa-Yeh UniversityChang-HwaTaiwan ROC
  3. 3.Visual Photonics Epitaxy Co., Ltd.Tao-YuanTaiwan ROC

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