Journal of Electronic Materials

, Volume 18, Issue 5, pp 619–622 | Cite as

Reactive ion etch characteristics of thin InGaAs and AlGaAs stop-etch layers

  • C. B. Cooper
  • S. Salimian
  • H. F. Macmillan
Article
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Abstract

Highly selective reactive ion etch processes, which can be used to remove one layer from very thin underlying layers, are of interest for a variety of device fabrication sequences. We present the results of a study on the suitability of InxGa1-xAs(x = 0.06, 0.14) and AlxGa1-xAs(x = 0.1, 0.2, 0.5 and 0.9) as stop-etch layers. Layer thicknesses ranged from 30 to 250Å. Etch chemistries were SiCl4 and SiCl4/SF6 for the InGaAs and AlGaAs layers, repectively. The relative efficiency of the stop-etch layers was investigated as a function of the thickness and composition of the layer, and as a function of the etch conditions.

Key words

selective etching RIE III-V compound semiconductor etching 
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Copyright information

© AIME 1989

Authors and Affiliations

  • C. B. Cooper
    • 1
  • S. Salimian
    • 1
  • H. F. Macmillan
    • 1
  1. 1.Varian Research CenterPalo Alto

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