Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence
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A brief review is given of the evidence supporting the “hydrogen model” of interface trap generation in silicon-based MOS structures. Emphasis is placed on the importance of electron spin resonance (ESR) in identifying and quantifying certain crucial defect species, including atomic hydrogen, self-trapped holes, and the interface trap itself — theP b center. Three types of experiments are considered: (1) low-temperature irradiation and isochronal anneals, (2) pulse radiolysis at room temperature, and (3) exposure of previously-irradiated devices to hydrogen gas. These disparate types of data are all reasonably accounted for by a unified model involving the production of H+ and/or H0 species in the oxide which subsequently drift to the interface where they react with hydrogen-passivated dangling bonds to formP b centers.
Key wordsRadiation damage in MOS radiolytic hydrogen species in oxides hydrogen model for interface trap generation
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- 5.D. L. Griscom, in Glass: Science and Technology Vol. 4B, eds. D. R. Uhlmann and N. J. Kreidl (Academic Press, Boston, 1990), p. 151.Google Scholar
- 12.D. L. Griscom, J. Non-Cryst. Solids (in press), 1992.Google Scholar
- 17.D. L. Griscom, D. B. Brown, and N. S. Saks, in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, eds. C. R. Helms and B. E. Deal (Plenum Publishing Corp., New York, 1988), p. 287.Google Scholar
- 22.CRC Handbook of Chemistry and Physics, ed. R. C. Weast (CRC, Boca Raton, FL, 1980), p. F-225Google Scholar
- 31.R. E. Stahlbush, A. H. Edwards, D. L. Griscom and B. J. Mrstik, J. Appl. Phys. (submitted).Google Scholar
- 32.R. E. Stahlbush and A. H. Edwards, in The Physics and Chemistry of SiO2 and the Si/SiO2 Interface, eds. C. R. Helms and B. E. Deal (submitted), 1992.Google Scholar
- 33.D. L. Griscom, C. J. Brinker, and R. A. B. Devine, (to be published).Google Scholar