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Journal of Electronic Materials

, Volume 21, Issue 7, pp 669–676 | Cite as

Wafer bonding technology for silicon-on-lnsulator applications: A review

  • Kiyoshi Mitani
  • Ulrich M. Gösele
Article

Abstract

School of Engineering, Duke University, Durham, North Carolina, 27706. The status of wafer bonding technology especially for silicon-on-insulator (SOI) materials is reviewed. General advantages of wafer bonding as well as specific problems of wafer bonding, such as interface bubble formation, and solutions for these problems are discussed. The specific requirements for SOI materials in terms of SOI layer thickness and the appropriate thinning procedures are dealt with. Interface properties such as bonding strength and electrical properties are also reviewed. Various device results are mentioned.

Key words

Wafer bonding bonding interface bonding strength bubbles silicon-oninsulator (SOI) polish-stop etch-stop micro-cleanroom set-up crack-opening method 

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Copyright information

© TMS 1992

Authors and Affiliations

  • Kiyoshi Mitani
    • 1
  • Ulrich M. Gösele
    • 1
  1. 1.School of EngineeringDuke UniversityDurham

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