Journal of Electronic Materials

, Volume 21, Issue 7, pp 669–676 | Cite as

Wafer bonding technology for silicon-on-lnsulator applications: A review

  • Kiyoshi Mitani
  • Ulrich M. Gösele


School of Engineering, Duke University, Durham, North Carolina, 27706. The status of wafer bonding technology especially for silicon-on-insulator (SOI) materials is reviewed. General advantages of wafer bonding as well as specific problems of wafer bonding, such as interface bubble formation, and solutions for these problems are discussed. The specific requirements for SOI materials in terms of SOI layer thickness and the appropriate thinning procedures are dealt with. Interface properties such as bonding strength and electrical properties are also reviewed. Various device results are mentioned.

Key words

Wafer bonding bonding interface bonding strength bubbles silicon-oninsulator (SOI) polish-stop etch-stop micro-cleanroom set-up crack-opening method 


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  1. 1.
    T. Nakamura, U.S. Patent 3.228.656 (1966).Google Scholar
  2. 2.
    D. M. Kenny, U.S. Patent 3.332.137 (1967).Google Scholar
  3. 3.
    G. Wallis and D. I. Pomerantz, J. Appl. Phys.40, 3946 (1969).CrossRefGoogle Scholar
  4. 4.
    T. R. Anthony, J. Appl. Phys.58, 1240 (1985).CrossRefGoogle Scholar
  5. 5.
    R. C. Frye, J. E. Griffith and Y. H. Wong, J. Electrocem. Soc.133, 1673 (1986).CrossRefGoogle Scholar
  6. 6.
    J. B. Lasky, Appl. Phys. Lett.,48, 78 (1986).CrossRefGoogle Scholar
  7. 7.
    M. Shimbo, K. Furukawa, F. Fukuda and K. Tanzawa, J. Appl. Phys.60, 2987 (1986).CrossRefGoogle Scholar
  8. 8.
    K. Petersen, P. Barth, J. Poydock, J. Brown, J. Mallon Jr. and J. Bryzek, Tech. Digest, IEEE Solid State Sensors and Actuator Workshop, Hilton Head Island, SC, (1988) p. 144.Google Scholar
  9. 9.
    K. Petersen, J. Brown, P. Barth, J. Mallon Jr. and J. Bryzek, Sensors and ActuatorsA21-A23, 96 (1990).Google Scholar
  10. 10.
    P. Barth, Sensors and ActuatorsA21-A23, 919 (1990).Google Scholar
  11. 11.
    M. A. Huff, M. S. Mettner, T. A. Lober and M. A. Schmidt, Tech. Digest, IEEE Solid Sensors and Actuator Workshop, Hilton Head Island, SC, (1990) p. 123.Google Scholar
  12. 12.
    A. Nakagawa, Y. Yamaguchi, K. Watanabe, H. Ohashi and M. Shimbo, Ext. Abst. 18th Conf. on Solid State Devices and Mater., Tokyo (1986) p. 89.Google Scholar
  13. 13.
    V. Lehmann, K. Mitani, R. Stengl, T. Mii and U. Gösele, Jpn. J. Appl. Phys.28, L2141 (1989).CrossRefGoogle Scholar
  14. 14.
    G. G. Goetz and A. M. Fathimulla, IEEE SOS/SOI Technology Conf., Stateline, NV, Oct. (1989) p. 125.Google Scholar
  15. 15.
    V. Lehmann, U. Gösele and K. Mitani, Solid State Technology, April, 91 (1990).Google Scholar
  16. 16.
    T. Abe, M. Nakano and T. Ito, Silicon-on-Insulator Technology and Devices, ed. D. N. Schmidt (The Electrochemical Society, Pennington, NJ, 1990) PV90-6, p. 61.Google Scholar
  17. 17.
    J. Haisma, G. A. C. M. Spierings, U. K. P. Biermann and J. A. Pals, Jpn. J. Appl. Phys.28, 1426 (1989).CrossRefGoogle Scholar
  18. 18.
    G. T. Jones, R. H. Shanaman, C. A. Goodwin and W. G. Easter, Proc. First Int. Symp. Semicond. Wafer Bonding Sci., Techn. and Applic, eds., U. Gösele, T. Abe, J. Haisma and M. Schmidt (The Electro Chemical Society, Pennington, NJ, 1992) p. 223.Google Scholar
  19. 19.
    J.-P. Colinge, Tech. Digest, IEDM, 817 (1989).Google Scholar
  20. 20.
    M. Yoshimi, H. Hazama, M. Takahashi, S. Kambayashi, T. Wada, K. Kato and H. Tango, IEEE Electron Devices36, 493 (1989).CrossRefGoogle Scholar
  21. 21.
    T. D. Stanley, Solid State Technology, 59, November (1990).Google Scholar
  22. 22.
    W. P. Maszara, J. Electrochem. Soc.138, 341 (1991).CrossRefGoogle Scholar
  23. 23.
    O. Okabayashi, H. Shirotori, H. Sakurazawa, E. Kanda, T. Yokoyama and M. Kawashima, J. Cryst. Growth103, 456 (1990).CrossRefGoogle Scholar
  24. 24.
    K. Mitani, V. Lehmann, R. Stengl, D. Feijoo, U. Gösele and H. Massoud, Jpn. J. Appl. Phys.30, 615 (1991).CrossRefGoogle Scholar
  25. 25.
    W. P. Maszara, G. Goetz, A. Caviglia and J. B. McKitterick, J. Appl. Phys.64, 4943 (1989).CrossRefGoogle Scholar
  26. 26.
    M. L. Williams, J. Appl. Polymer Sci.13, 29 (1969).CrossRefGoogle Scholar
  27. 27.
    T. Abe, T. Takei, A. Uchiyama, K. Yoshizawa and Y. Nakazato, Jpn. J. Appl. Phys.29, L2311 (1990).CrossRefGoogle Scholar
  28. 28.
    R. Stengl, K. Mitani, V. Lehmann and U. Gösele, IEEE SOS/ SOI Techn. Conf., Stateline, NV, Oct. (1989) p. 123.Google Scholar
  29. 29.
    R. Stengl, K.-Y. Ahn and U. Gösele, Jpn. J. Appl. Phys.27, L2364 (1988).CrossRefGoogle Scholar
  30. 30.
    V. Lehmann, U. Gösele and K. Mitani, Adv. Mater.2, 372 (1990).CrossRefGoogle Scholar
  31. 31.
    G. Cha, W.-S. Yang, D. Feijoo, W. J. Taylor, R. Stengl and U. Gösele, Proc. First Int. Symp. on Semicond. Wafer Bonding Sci., Techn. and Applic, eds., U. Gösele, T. Abe, J. Haisma and M. Schmidt (The Electrochem. Society, Pennington, NJ, 1992) p. 249.Google Scholar
  32. 32.
    R. Stengl, T. Tan and U. Gösele, Jpn. J. Appl. Phys.28,1735 (1989).CrossRefGoogle Scholar
  33. 33.
    H. Ohashi, J. Ohura, T. Tsukakoshi and M. Shimbo, Tech. Digest, IEDM, 210 (1986).Google Scholar
  34. 34.
    S. Bengtsson and O. Engström, J. Electrochem. Soc.137, 2297 (1990).CrossRefGoogle Scholar
  35. 35.
    A. Yamada, O. Okabayashi, T. Nakamura, E. Kanda and M. Kawashima, 5th Int. Workshop on Future Electron Devices — 3D Integration, Miyagi-Zao, May-June (1988).Google Scholar
  36. 36.
    T. Matsushita, H. Satoh, M. Shimanoe, A. Nieda, A. Ogasawara, M. Yamagishi and A. Yagi, 47th Annual Dev. Res. Conf, IEEE, Cambridge, MA, June (1989).Google Scholar
  37. 37.
    Y. Arimoto, H. Gotou, K. Ueno, K. Imaoka and M. Ozeki, 46th Annual Dev. Res. Conf., IEEE, Boulder, CO, June (1988).Google Scholar
  38. 38.
    H. Muraoka, T. Ohashi and Y. Sumitomo, Semiconductor Silicon, eds. H. R. Huff and R. R. Burgess (The Electrochemical Society, Pennington, NJ, 1973) Softbound Proc. Series.Google Scholar
  39. 39.
    M. Kimura, K. Egami, M. Kanamori and T. Hamaguchi, Appl. Phys. Lett.43, 263 (1983).CrossRefGoogle Scholar
  40. 40.
    D. J. Godbey, M. E. Twigg, H. L. Hughs, L. J. Palkuti, P. Leonov and J. J. Wang, J. Electrochem. Soc.137, 3219 (1990).CrossRefGoogle Scholar
  41. 41.
    P. Narozny, M. Hamacher, H. Dämbkes, H. Kibbel and E. Kasper, Tech. Digest, IEDM,88, 562 (1988).Google Scholar
  42. 42.
    V. Lehmann, K. Mitani, D. Feijoo and U. Gösele, J. Electrochem. Soc.138, L3 (1991).CrossRefGoogle Scholar
  43. 43.
    A. Soderbarg, IEEE SOS/SOI Techn. Conf., Stateline, NV, Oct. (1989) p. 64.Google Scholar
  44. 44.
    K.-Y. Ahn, R. Stengl, T. Y. Tan, U. Gösele and P. Smith, Appl. Phys.A50, 85 (1989).Google Scholar
  45. 45.
    T. Abe, A. Uchiyama, K. Yoshizawa, Y. Nakazato, M. Miyawaki and T. Ohmi, Jpn. J. Appl. Phys.29, L2315 (1990).CrossRefGoogle Scholar
  46. 46.
    F. P. Widdershoven, J. Haisma and J. P. M. Naus, J. Appl. Phys.68, 6253 (1990).CrossRefGoogle Scholar
  47. 47.
    S. Bengtsson and O. Engström, J. Appl. Phys.66, 1231 (1989).CrossRefGoogle Scholar
  48. 48.
    L. J. Spangler and K. D. Wise, IEEE Electron Device Lett.EDL-8, 137 (1987).Google Scholar
  49. 49.
    X.-L. Xu, J. Zhan, H. Shen and Q.-Y. Tong, Ext. Abst. 20th Conf. on Solid State Dev. and Mater. Tokyo, 197 (1988).Google Scholar

Copyright information

© TMS 1992

Authors and Affiliations

  • Kiyoshi Mitani
    • 1
  • Ulrich M. Gösele
    • 1
  1. 1.School of EngineeringDuke UniversityDurham

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