Journal of Electronic Materials

, Volume 3, Issue 3, pp 693–707

Three garnet compositions for bubble domain memories

  • J. W. Nielsen
  • S. L. Blank
  • D. H. Smith
  • G. P. Vella-Coleiro
  • F. B. Hagedorn
  • R. L. Barns
  • W. A. Biolsi
Article

DOI: 10.1007/BF02655293

Cite this article as:
Nielsen, J.W., Blank, S.L., Smith, D.H. et al. JEM (1974) 3: 693. doi:10.1007/BF02655293

Abstract

The choice of magnetic garnet compositions for bubble memories is always a compromise dictated by the material requirements generated by the specifications on the memories. The three compositions reported, Y2.62Smo.38Fe3.85Ga1.15O12, Gd2.lLuO.9Fe4.4Al0.6O12, and Yl.92Sm0.1Ca0.98Fe4.02Ge0.98O12, represent three examples of such a compromise. The first composition is excellent for use in circuits operating at 100 KHz over a temperature range of -20° to 80°C. The second has a mobility up to 5000 cm/sec/0e and is capable of very high speed operation at the sacrifice of stability toward temperature. The third exhibits excellent stability toward temperature and has operated at 1 MHz but is compositionally more complex.

Melt compositions for film growth and a summary of magnetic properties are presented for the three compositions. Factors to be weighed in composition selection for bubble domain memories are discussed.

Keywords

magnetic garnets bubble domains memories garnet films 

Copyright information

© American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc 1974

Authors and Affiliations

  • J. W. Nielsen
    • 1
  • S. L. Blank
    • 1
  • D. H. Smith
    • 1
  • G. P. Vella-Coleiro
    • 1
  • F. B. Hagedorn
    • 1
  • R. L. Barns
    • 1
  • W. A. Biolsi
    • 1
  1. 1.Bell LaboratoriesNew Jersey

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