Journal of Electronic Materials

, Volume 3, Issue 3, pp 693–707

Three garnet compositions for bubble domain memories

  • J. W. Nielsen
  • S. L. Blank
  • D. H. Smith
  • G. P. Vella-Coleiro
  • F. B. Hagedorn
  • R. L. Barns
  • W. A. Biolsi
Article

Abstract

The choice of magnetic garnet compositions for bubble memories is always a compromise dictated by the material requirements generated by the specifications on the memories. The three compositions reported, Y2.62Smo.38Fe3.85Ga1.15O12, Gd2.lLuO.9Fe4.4Al0.6O12, and Yl.92Sm0.1Ca0.98Fe4.02Ge0.98O12, represent three examples of such a compromise. The first composition is excellent for use in circuits operating at 100 KHz over a temperature range of -20° to 80°C. The second has a mobility up to 5000 cm/sec/0e and is capable of very high speed operation at the sacrifice of stability toward temperature. The third exhibits excellent stability toward temperature and has operated at 1 MHz but is compositionally more complex.

Melt compositions for film growth and a summary of magnetic properties are presented for the three compositions. Factors to be weighed in composition selection for bubble domain memories are discussed.

Keywords

magnetic garnets bubble domains memories garnet films 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. H. Bobeck, E. G. Spencer, L. G. Van Uitert, S. C. Abrahams, R. L. Barns, W. H. Grodkiewicz, R. C. Sherwood, P. A. Schmidt, D. H. Smith, and E. M. Walters,Appl. Phys. Lett.,17, 131 (1970).CrossRefGoogle Scholar
  2. 2.
    L. G. Van Uitert, W. A. Bonner, W. H. Grodkiewicz, L. Pictroski, and G. J. Zydzik,Mat. Res. Bull. 5, 825 (1970).CrossRefGoogle Scholar
  3. 3.
    L. K. Shick, J. W. Nielsen, A. H. Bobeck, A. J. Kurtzig, P. C. Michaelis and J. P. Reekstin,Appl. Phys. Lett.,18, 89 (1971).CrossRefGoogle Scholar
  4. 4.
    E. A. Giess, B. A. Calhoun, E. Klokholm, T. R. McGuire, and L. L. Rosier,Mat. Res. Bull.,6, 317 (1971).CrossRefGoogle Scholar
  5. 5.
    L. G. Van Uitert, E. M. Gyorgy, W. A. Bonner, W. H. Grodkiewicz, E. J. Heilner, and G. J. Zydzik,Mat. Res. Bull., 6, 1185 (1971).CrossRefGoogle Scholar
  6. 6.
    E. A. Giess, B. E. Argyle, D. C. Cronemeyer, E. Klokholm T. R. McGuire, D. F. O’Kane, T. S. Plaskett, and V. Sadagopan,AIP Conf. Proc. No. 5, Magnetism and Magnetic Materials — 1971, Am. Inst. of Physics, N. Y., 1972, p. 110.Google Scholar
  7. 7.
    W. A. Bonner, J. E. Geusic, D. H. Smith, F. C. Rossol, L. G. Van Uitert, and G. P. Vella-Coleiro, J.Appl. Phys., 43, 3226 (1972).CrossRefGoogle Scholar
  8. 8.
    W. A. Bonner, J. E. Geusic, D. H. Smith, L. G. Van Uitert, and G. P. Vella-Coleiro,Mat. Res. Bull., 8, 1223 (1973).CrossRefGoogle Scholar
  9. 9.
    S. L. Blank and J. W. Nielsen, J.Cryst. Growth, 17, 302 (1972).CrossRefGoogle Scholar
  10. 10.
    D. H. Smith and A. W. Anderson,AIP Conf. Proc. No. 5, Magnetism and Magnetic Materials - 1971.; Am. Inst. of Physics, N. Y., 1972, p. 120.Google Scholar
  11. 11.
    G. P. Vella-Coleiro, and W. J. Tabor,Appl. Phys. Lett., 21, 7 (1972).CrossRefGoogle Scholar
  12. 12.
    A. H. Bobeck, R. F. Fischer and J. L. Smith, AIPConf. Proc. No. 5, Magnetism and Magnetic Materials -1971, Am. Inst. of Physics, N. Y., 1972 p.45.Google Scholar
  13. 13.
    A. H. Bobeck, private communication.Google Scholar
  14. 14.
    H. J. Levinstein, S. Licht, R. W. Landorf and S. L. Blank,Appl. Phys. Lett., 19, 486 (1971).CrossRefGoogle Scholar
  15. 15.
    D. C. Miller,J. Electrochem. Soc., 120, 678 (1973).CrossRefGoogle Scholar
  16. 16.
    D. H. Smith, F. B. Hagedorn, and B. S. Hewitt,J. Appl. Phys., 44, 4177 (1973).CrossRefGoogle Scholar
  17. 17.
    E. A. Giess and D. C. Cronemeyer,Appl. Phys. Lett., 22, 601 (1973).CrossRefGoogle Scholar
  18. 18.
    F. B. Hagedorn,AIP Conf. Proc. No. 5, agnetism and Magnetic Materials - 1971, Am. Inst. of Physics, N. Y., 1972, p. 72.Google Scholar
  19. 19.
    G. P. Vella-Coleiro, F. B. Hagedorn, Y. S. Chen, and S. L. Blank,Appl. Phys. Lett., 22, 324 (1973).CrossRefGoogle Scholar
  20. 20.
    H. Harper and R. W. Teale,J. Phys. Chem.,2, 1926 (1969).Google Scholar
  21. 21.
    E. M. Gyorgy, M. D. Sturge, L. G. Van Uitert, E. J. Heilner, and W. H. Grodkiewicz,J. Appl. Phys.,44, 438 (1973).CrossRefGoogle Scholar
  22. 22.
    D. M. Heinz, J. L. Archer, P. J. Besser, P. E. Elkins, B. J. Huffman, J. E. Mee, L. A. Moudy and L. R. Tocci, “Single Crystal Orthoferrites for Memory Applications”, Research and Development Technical Report, ECOM-0258-2, Contact DAABO7-7O-C-O258, Autonetics, North American Rockwell, Feb. 1972, p. 31.Google Scholar
  23. 23.
    While this work was in progress, the use of Sm to control the lattice parameter of yttrium iron gallium garnet was reported by W. Tolksdorf, G. Bartels, G. P. Espinosa, P. Holst, D. Mateika, and F. Welz,J. Cryst. Growth, 17, 322 (1972).CrossRefGoogle Scholar
  24. 24.
    J. W. Nielsen, R. D. Pierce and L. K. Shick, unpublished work.Google Scholar
  25. 25.
    F. B. Hagedorn, unpublished work.Google Scholar
  26. 26.
    S. L. Blank, B. S. Hewitt, L. K. Shick, and J. W. Nielsen,AIP Conf. Proc. #10, Magnetism and Magnetic Materials - 1972, Am. Inst. of Phys., N. Y., 1973, p. 256.Google Scholar
  27. 27.
    D. L. Nash, S. Knight and B. S. Hewitt, unpublished work.Google Scholar
  28. 28.
    W. Strauss, unpublished work.Google Scholar
  29. 29.
    D. C. Fowlis, unpublished work.Google Scholar
  30. 30.
    B. S. Hewitt, R. D. Pierce, S. L. Blank and S. Knight,IEEE Trans, on Magnetics,MAG-9, No. 3, 366 (1973).CrossRefGoogle Scholar
  31. 31.
    C. D. Brandie and S. L. Blank, unpublished work.Google Scholar
  32. 32.
    S. Geller, H. J. Williams, G. P. Espinosa and R. C. Sherwood,Bell Syst. Tech. J.,43, 565 (1964).Google Scholar
  33. 33.
    P. W. Shumate and R. J. Peirce,Appl. Phys. Lett.,23, 204 (1973).CrossRefGoogle Scholar

Copyright information

© American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc 1974

Authors and Affiliations

  • J. W. Nielsen
    • 1
  • S. L. Blank
    • 1
  • D. H. Smith
    • 1
  • G. P. Vella-Coleiro
    • 1
  • F. B. Hagedorn
    • 1
  • R. L. Barns
    • 1
  • W. A. Biolsi
    • 1
  1. 1.Bell LaboratoriesNew Jersey

Personalised recommendations