Journal of Electronic Materials

, Volume 12, Issue 6, pp 973–982 | Cite as

Isolation of silicon film grown on porous silicon layer

  • Hiroshi Takai
  • Tadatsugu Itoh
Article
Received:
Revised:

Abstract

We have investigated a new technology for dielectric isolation of a Si film grown epitaxially on a porous silicon layer. After oxidation of the porous silicon layer, a Si on Ohcidized Porous Silicon(SOPS) structure can be obtained. It is proposed that micropores pinch off quickly in the interfacial region between the porous silicon layer and the epitaxial film. A minimum yield calculated from Rutherford backscattering spectra of the epitaxial silicon film is 5.3%, and an electron Hall mobility of 600cm2/V.s is obtained in the film with a carrier concentration of 1 x 1017 /cm3. MOSFETs were fabricated on the SOPS structure.

Keywords

isolation epitaxial growth porous silicon 
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Copyright information

© The Metallurgical of Society of AIME 1983

Authors and Affiliations

  • Hiroshi Takai
    • 1
  • Tadatsugu Itoh
    • 1
  1. 1.School of Science and EngineeringWaseda UniversityTokyoJapan

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