Journal of Electronic Materials

, Volume 16, Issue 4, pp 289–294 | Cite as

The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substrates

  • H. Mani
  • A. Joullie
  • J. Bhan
  • C. Schiller
  • J. Primot
Article
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Revised:

Abstract

The growth by liquid-phase epitaxy of InAs1−x Sb x (x = 0.08-0.16) on GaSb was accomplished by using melts of constant arsenic concentration x As L = 0.014. The study of the influence of the degree of supercooling ΔT on the crystal growth was investigated. The strong tendency of the In-As-Sb liquid to dissolve the GaSb substrate was resolved by using high ΔT (20-30° C) for layers having a positive lattice-mismatch Δa/a more than 1.5 x 10−3. As positive lattice-mismatch becomes smaller, a larger supersaturation is required to control the substrate dissolution. But owing to the bulk nucleation which restricts the supercooling ΔT at values near 30° C, the growth of epitaxial layers with small lattice-mismatch (until - 5 × 10−4) was achieved only from time to time. It was observed that an increase of ΔT increases the concentration of antimony in the epilayers and hence leads to the lattice-mismatch. The dislocation etch pit density was found to be only dependent on the lattice-mismatch. The thickness of the grown layers is proportional to ΔT xt 1/2 with a factorK = 0.025 μm . °C−2 . s−1/2

Key words

LPE growth InAsSb phase diagram 
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References

  1. 1.
    J. P. Van der Ziel, T. H. Chiu and W. T. Tsang, Appl. Phys. Lett.47, 1139 (1985).CrossRefGoogle Scholar
  2. 2.
    J. P. Van der Ziel, T. H. Chiu and W. T. Tsang, Appl. Phys. Lett.48, 315 (1986).CrossRefGoogle Scholar
  3. 3.
    L. O. Bubulac, A. M. Andrews, E. R. Gertner and D. T. Cheung, Appl. Phys. Lett.36, 734 (1980).CrossRefGoogle Scholar
  4. 4.
    K. Mohammed, F. Capasso, R. A. Logan, J. P. Van der Ziel, and A. L. Hutchinson, Electron. Lett.22, 215 (1986).CrossRefGoogle Scholar
  5. 5.
    T. Fukui and Y. Horikoshi, Jpn. J. Appl. Phys.19, L 53 (1980).Google Scholar
  6. 6.
    P. K. Chiang and S. M. Bedair, J. Electrochem. Soc.131, 2422 (1984).CrossRefGoogle Scholar
  7. 7.
    W. T. Tsang, T. H. Chiu, D. W. Kisker and J. A. Ditzenberger, Appl. Phys. Lett.46, 283 (1985).CrossRefGoogle Scholar
  8. 8.
    T. H. Chiu, W. T. Tsang, J. A. Ditzenberg, S. N. G. Chu and J. P. Van der Ziel, J. Appl. Phys.60, 205 (1986).CrossRefGoogle Scholar
  9. 9.
    G. B. Stringfellow and P. E. Greene, J. Electrochem. Soc.118, 805 (1971).CrossRefGoogle Scholar
  10. 10.
    A. M. Andrews, D. T. Cheung, E. R. Gertner and J. T. Longo, J. Vac. Sci. Technol.13, 961 (1976).CrossRefGoogle Scholar
  11. 11.
    N. A. Bert, M. Z. Zhingharev, S. G. Konnikov, N. M. Mursakulov and D. N. Tretyakov, Kristall und Technik15, 787 (1980).CrossRefGoogle Scholar
  12. 12.
    S. A. Bondar', V. N. Vigdorovich, G. P. Furmanov and S. G. Shutov, Sov. Phys. Tech. Phys.27, 215 (1982).Google Scholar
  13. 13.
    R. Kh. Akchurin, S. R. Borisov and V. B. Ufimtsev, Inorg. Mater.18, 1256 (1983).Google Scholar
  14. 14.
    J. P. Van der Ziel, R. A. Logan, R. M. Mikulyak and A. A. Ballman, IEEE J. Quantum Electron.QE-21, 1827 (1985).CrossRefGoogle Scholar
  15. 15.
    E. R. Gertner, A. M. Andrews, L. O. Bubulac, D. T. Cheung, M. J. Ludowise and R. A. Riedel, J. Electron. Mater.8, 545 (1979).CrossRefGoogle Scholar
  16. 16.
    L. D. Pramatarova, Crystal Res. Technol.18, 575 (1983).CrossRefGoogle Scholar
  17. 17.
    L. D. Pramatarova, Crystal Res. Technol.19, 877 (1984).CrossRefGoogle Scholar
  18. 18.
    J. R. Skelton and J. R. Knight, Solid-State Electron.28, 1166 (1985).CrossRefGoogle Scholar
  19. 19.
    G. B. Stringfellow and P. E. Greene, J. Phys. Chem. Solids30, 1779 (1969).CrossRefGoogle Scholar
  20. 20.
    Yu. B. Bolkhovityanov and S. I. Chikichev, Cryst. Res. Technol.18, 847 (1983).CrossRefGoogle Scholar
  21. 21.
    A. Joullie, F. Jia Hua, F. Karouta and H. Mani, J. Cryst. Growth75, 309 (1986).CrossRefGoogle Scholar
  22. 22.
    H. Mani, A. Joullie, F. Karouta and C. Schiller, J. Appl. Phys.59, 2728 (1986).CrossRefGoogle Scholar
  23. 23.
    B. de Cremoux, Int. Symp. on Ga As and related compounds, St Louis, MO, 1978, Inst. Phys. Conf. Ser. n° 45 (The Institute of Physics, Bristol, 1979) p. 52.Google Scholar
  24. 24.
    J. J. Hsieh, J. Cryst. Growth27, 49 (1974).Google Scholar

Copyright information

© The Metallurgical of Society of AIME 1987

Authors and Affiliations

  • H. Mani
    • 1
  • A. Joullie
    • 1
  • J. Bhan
    • 1
  • C. Schiller
    • 2
  • J. Primot
    • 3
  1. 1.Equipe de Microoptoélectronique de Montpellier (EM2)Unité Associée au CNRS n° 392Montpellier CedexFrance
  2. 2.Laboratoire d'Electronique et de Physique Appliquée (LEP)Limeil-BrévannesFrance
  3. 3.Laboratoire de BagneuxCNETBAGNEUXFrance

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