Journal of Electronic Materials

, Volume 24, Issue 9, pp 1219–1224 | Cite as

Compositional dependence of cation impurity gettering in Hg1−xCdxTe

  • José L. Meléndez
  • John Tregilgas
  • John Dodge
  • C. R. Helms
Article
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Revised:

Abstract

Cation impurity gettering in Hg1−xCdxTe is described in the context of process models which include the interactions of the impurities and the dominant native point defects. Experimental results are presented using secondary ion mass spectroscopy (SIMS) profiles of Au redistribution in Hg1−xCdxTe (x = 0.2,0.3,0.4) following Hg anneals and ion mills, which are processes known to inject excess Hg interstitials. In either process, the IB impurity distributes preferentially to high vacancy regions. The junction depth of the low to high impurity transition is determined by SIMS. For Hg-rich anneals of Au-doped high vacancy concentration material, the impurity junction behavior with respect to anneal time and temperature is compared to that expected for type converted electrical junctions in vacancy-only material. For milled Au-doped Hg0.7Cd0.3Te with a high vacancy concentration, the impurity junction depths are approximately proportional to the amount of material removed, as was the case with x = 0.2 material. Hg anneal type-conversion rates are found to have a strong compositional dependence which compares favorably with the strong self-diffusion coefficient dependence on x-value. In contrast, the mill conversion rate has a weak x-value dependence. Effects of trace vs dominant Au levels compared to the background vacancy concentration are quantified. True decoration of intrinsic defect processes requires Au <<[Cation Vacancies].

Key words

Defect interactions HgCdTe impurity gettering native point defects 
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Copyright information

© The Metallurgical of Society of AIME 1995

Authors and Affiliations

  • José L. Meléndez
    • 1
  • John Tregilgas
    • 1
  • John Dodge
    • 1
  • C. R. Helms
    • 2
  1. 1.Corporate ResearchTexas Instruments Inc.Dallas
  2. 2.Department of Electrical EngineeringStanford UniversityStanford

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