Journal of Electronic Materials

, Volume 5, Issue 1, pp 1–12 | Cite as

Silicide formation and interdiffusion effects in Si-Ta, SiO2-Ta AND Si-PtSi-Ta thin film structures

  • A. Christou
  • H. M. Day
Article
Received:

Abstract

The formation of TaSi2 in the Si-PtSi-Ta and Si-Ta systems has been studied using Auger spectroscopy, x-ray diffraction and electron diffraction techniques. The reaction of tantalum with PtSi was observed by Sinha, et al.l to take place with high temperature (800°-900°c) annealing of thin film systems consisting of Si-PtSi-Ta-W1. In the present investigation, it is shown that tantalum reacts with PtSi at approximately 600°C to form a mixture of Ta5Si3 and TaSi2 and predominantly TaSi2 at 785°C. Platinum is displaced at the refractory metal (Ta)-PtSi interface, whereupon the more stable refractory metal-silicide is formed. The displaced platinum reacts further with the excess silicon which diffuses from the Si-PtSi interface. The Si-PtSi-Ta reaction is similar to the Si-PtSi-W reaction. However, unlike tungsten which migrates very little in the Si-PtSi-W system, tantalum appears to interdiffuse with the PtSi at temperatures as low as 600°C. In the case of the Si-Ta couple, TaSi2 forms at approximately 750°C as determined by transmission electron microscopy (TEM) measurements. The kinetics of TaSi2 formation at the Si-Ta interface are compared to that which takes place at the PtSi-Ta interface to determine the influence of the PtSi layer. Silicide formation was not observed in SiO2-Ta specimens. after anneals up to 800°c. At 750°C Ta2O5 formed as observed by electron diffraction.

Key words

Suicides Thin films Auger spectroscopy Diffusion 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. K. Sinha, R. B. Marcus, T. T. Sheng, and S. E. Haszkó, J. Appl. Phys.,43, 3637 (1972).CrossRefGoogle Scholar
  2. 2.
    H. M. Day, A. Christou, W. H. Weisenberger and J. K. Hirvonen, J. Electrochem. Soc. 122, No. 6, 769 (1975).CrossRefGoogle Scholar
  3. 3.
    A. Christou and H. M. Day, J. Electron. Mater.3, 25 (1974).Google Scholar
  4. 4.
    A. Christou and H. M. Day, J. Electrochem. Soc.121, No. 8, 1076 (1974).Google Scholar
  5. 5.
    P. W. Palmberg, J. Vacuum Sci. and Technol.9 160 (1972).CrossRefGoogle Scholar
  6. 6.
    R. Feder and B. S. Berry, J. Appl. Cryst.3 372 (1970).CrossRefGoogle Scholar
  7. 7.
    A. Christou, W. H. Weisenberger, L. Jarvis and J. K. Hirvonen, J. Electron. Mater.4, 329 (1975).Google Scholar
  8. 8.
    R. B. Marcus, in B. Schwartz and N. Schwartz (eds), “Measurement Techniques for Thin Films”, p. 1, Electrochem. Soc., New York, 1967.Google Scholar
  9. 9.
    J. W. Mayer and K. N. Tu, J. Vac. Sci. Technol.11, No. 1, 86 (1974).CrossRefGoogle Scholar
  10. 10.
    R. Hultgren, R. L. Orr and K. Kelly, “Values of Thermodynamic Properties of Metals and Alloys”, Dept. of Mineral Technology, Univ. of Calif., Berkeley, Calif. 1968.Google Scholar
  11. 11.
    R. P. Elliot, Constitution of Binary Alloys, First Supplement (McGraw-Hill, New York, 1965).Google Scholar
  12. 12.
    F. A. Shunk, Constitution of Binary Alloys, Second Supplement (McGraw-Hill, New York, 1969).Google Scholar
  13. 13.
    A. K. Sinha, J. Electrochem. Soc.120, No. 12, 1767, (1973).CrossRefGoogle Scholar
  14. 14.
    A. K. Sinha, M. H. Read and T. E. Smith, J. Electrochem. Soc.120, No. 12, 1775 (1973).CrossRefGoogle Scholar
  15. 15.
    A. W. Searcy and L. N. Finnie, J. Am. Ceram. Soc.45, 268 (1962).CrossRefGoogle Scholar

Copyright information

© American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc 1976

Authors and Affiliations

  • A. Christou
    • 1
  • H. M. Day
    • 1
  1. 1.Naval Research LaboratoryWashington

Personalised recommendations