Journal of Electronic Materials

, Volume 20, Issue 1, pp 35–48 | Cite as

Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level

  • T. N. Theis
  • P. M. Mooney
  • B. D. Parker


We summarize a large body of experimental and theoretical work, especially in Si-doped GaAs and Al x Ga1-x As, regarding the bistability of theDX center. There is good evidence that theDX center is just the simple donor, and that each donor can exist in either of two distinct lattice configurations, each with its own spectrum of bound electronic states. Generally, the substitutional configuration binds electrons in shallow hydrogenic states, but many observations also indicate a deep (highly localized) state ofA 1 symmetry. These states are to be distinguished from bound states of a lattice-distorted configuration, the lowest-lying of which is the deepDX level. The occupation of theDX level in thermal equilibrium with the states of the conduction band can be reasonably well modeled by assuming thatDX is either a one-electron or a two-electron state, and we discuss the reasons for this ambiguity. However, we then show that such thermal equilibrium results are consistent with thermal capture and emission kineticsonly if we assume thatDX is a two-electron state. Our results thus support the model of Chadi and Chang in which the distorted configuration is stabilized by capture of two electrons. In other words, the defect exhibits negative effective correlation energy (negativeU).

Key words

AlGaAs DX centers Si doped 


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  1. 1.
    F. Bassani, G. Iadonisi and B. Preziosi, Rep. Prog. Phys.37, 1099 (1974).CrossRefGoogle Scholar
  2. 2.
    D. V. Lang, R. A. Logan and M. Jaros, Phys. Rev. B19, 1015 (1979).CrossRefGoogle Scholar
  3. 3.
    M. O. Watanabe, Y. Ahizawa, N. Sugiyama and T. Nakanisi, Inst. Phys. Conf. Ser.83, 105 (1987).Google Scholar
  4. 4.
    G. Brunthaler, K. Ploog and W. Jantsch, Phys. Rev. Lett.63, 2276 (1989).CrossRefGoogle Scholar
  5. 5.
    T. N. Theis, T. N. Morgan, B. D. Parker and S. L. Wright, Mater. Sc. Forum Vols. 38–41, Pt. 3, (Trans Tech Publications, Switzerland, 1989) pp. 1073–1078.Google Scholar
  6. 6.
    M. F. Li, P. Y. Yu, E. R. Weber and W. Hansen, Phys. Rev. B36, 4531 (1987).CrossRefGoogle Scholar
  7. 7.
    T. N. Theis, T. F. Kuech, L. F. Palmateer and P. M. Mooney, Inst. Phys. Conf. Ser.74, 241 (1984).Google Scholar
  8. 8.
    T. N. Theis, Defects in Semiconductors, ed. H. J. von Bardeleben (Switzerland: Trans Tech) pp 393–8 (1986b).Google Scholar
  9. 9.
    M. Mizuta and K. Mori, Phys. Rev. B37, 1043 (1988).CrossRefGoogle Scholar
  10. 10.
    T. N. Theis, Inst. Phys. Conf. Ser.95, 307 (1989).Google Scholar
  11. 11.
    J. E. Dmochowski, J. M. Langer and W. Jantsch, Inst. Phys. Conf. Ser.95, 325 (1989).Google Scholar
  12. 12.
    J. E. Dmochowski, J. Langer, J. Raczynska and W. Jantsch, Phys. Rev. B38, 3276 (1988).CrossRefGoogle Scholar
  13. 13.
    J. E. Dmochowski, L. Dobaczewski, J. M. Langer and W. Jantsch, Phys. Rev. B40, 9671 (1989).CrossRefGoogle Scholar
  14. 14.
    M. Mizuta, M. Tachikawa, H. Kukimoto and S. Minomura, Jpn. J. Appl. Phys.24, L143 (1985).CrossRefGoogle Scholar
  15. 15.
    M. Tachikawa, T. Fujisawa, H. Kukimoto, G. Oomi and S. Minomura, Jpn J. Appl. Phys.24, L893 (1985).CrossRefGoogle Scholar
  16. 16.
    D. K. Maude, J. C. Portai, L. Dmowski, T. Foster, L. Eaves, M. Nathan, M. Heiblum, J. J. Harris and R. B. Beall, Phys. Rev. Lett.59, 815 (1987).CrossRefGoogle Scholar
  17. 17.
    L. Eaves, T. J. Foster, D. K. Maude, J. C. Portal, R. Murray, R. C. Newman, L. Dmowski, R. B. Beall, J. J. Harris, M. I. Nathan and M. Heiblum, Inst. Phys. Conf. Ser.95, 315 (1989).Google Scholar
  18. 18.
    P. M. Mooney, Appl. Phys. Reviews, J. Appl. Phys.67, R1 (1990).CrossRefGoogle Scholar
  19. 19.
    D. J. Chadi and K. J. Chang, Phys. Rev. Lett.61, 873 (1988).CrossRefGoogle Scholar
  20. 20.
    D. J. Chadi and K. J. Chang, Phys. Rev. B39, 10366 (1989).CrossRefGoogle Scholar
  21. 21.
    E. Callaja, P. M. Mooney and S. L. Wright, Appl. Phys. Lett.56, 2102 (1990).CrossRefGoogle Scholar
  22. 22.
    T. N. Morgan, Defects in Semiconductors 15, ed. G. Firenzi, Mater. Sc. Forum vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 287.Google Scholar
  23. 23.
    P. M. Mooney, T. N. Theis and S. L. Wright, Appl. Phys. Lett.53, 2546 (1988).CrossRefGoogle Scholar
  24. 24.
    T. Baba, M. Mizuta, T. Fujizawa, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys.28, L891 (1989).CrossRefGoogle Scholar
  25. 25.
    M. Mizuta and T. Kitano, Appl. Phys. Lett.52, 126 (1987).CrossRefGoogle Scholar
  26. 26.
    K. Khachaturyan, E. R. Weber and M. Kaminska, Defects in Semiconductors 15, ed. G. Firenzi, Mater. Sc. Forum. vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1067.Google Scholar
  27. 27.
    J. E. Dmochowski, Z. Wasilewski and R. A. Stradling, Proc. 20th ICPS, Thessaloniki, 1990, in press.Google Scholar
  28. 28.
    T. N. Theis and P. M. Mooney, Mat. Res. Soc. Symp. Proc.163, (Mater. Res. Soc., 1990) p. 729.Google Scholar
  29. 29.
    L. Dobaczewski, P. Kaczor, J. M. Langer, A. R. Peaker and I. Poole, Proc. 20th ICPS, Thessaloniki, 1990, in press; L. Dobaczewski, private communication.Google Scholar
  30. 30.
    M. Fockele, J.-M. Spaeth and P. Gibart, Proc. 20th ICPS, Thessaloniki, 1990, in press.Google Scholar
  31. 31.
    J. Dabrowski, M. Scheffler and R. Strehlow, Proc. 20th ICPS, Thessaloniki, 1990, in press; J. Dabrowski and M. Scheffler, private communication.Google Scholar
  32. 32.
    G. E. Stillman, C. M. Wolfe and J. O. Dimmock, Semiconductors and Semimetals, Vol 12, Infrared Detectors II, eds. R. K. Willardson and A. C. Beer (Academic Press, New York, 1977) p. 169.Google Scholar
  33. 33.
    R. Dingle, R. A. Logan and J. R. Arthur, Jr., Inst Phys. Conf. Ser.33a, 210 (1977).Google Scholar
  34. 34.
    A. J. Springthorpe, F. D King and A. Becke, J. Electron. Mater.4, 101 (1975).Google Scholar
  35. 35.
    M. W. Lee, D. Romero, H. D. Drew, M. Shayegan and B. S. Elman, Solid State Commun.66, 23 (1988).CrossRefGoogle Scholar
  36. 36.
    H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (New York: Academic Press) pp 188–194 (1978).Google Scholar
  37. 37.
    T. N. Morgan, Phys. Rev. B.34, 2664 (1986).CrossRefGoogle Scholar
  38. 38.
    N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, Y. C. Chang and H. Morkoç, Phys. Rev. B30, 4481 (1984).CrossRefGoogle Scholar
  39. 39.
    P. M. Mooney, W. Wilkening, U. Kaufmann and T. F. Kuech, Phys. Rev. B39, 5554 (1989).CrossRefGoogle Scholar
  40. 40.
    H. J. von Bardeleben, J. C. Bourgoin, P. Basmaji and P. Gibart, Phys. Rev. B40, 5892 (1989).CrossRefGoogle Scholar
  41. 41.
    K. Khachaturyan, E. R. Weber, M. G. Crawford and G. E. Stillman, (this volume).Google Scholar
  42. 42.
    E. Glaser, T. A. Kennedy and B. Molnar, Inst. Phys. Conf. Ser. No. 95, 233 (1989) and E. Glaser, T. A. Kennedy, R. S. Sillmon and M. G. Spenser, Phys. Rev. B40, 3447 (1989).Google Scholar
  43. 43.
    U. Kaufman, W. Wilkening, P. M. Mooney and T. F. Kuech, Phys. Rev. B41, 10206 (1990).CrossRefGoogle Scholar
  44. 44.
    H. P. Hjalmarson, P. Vogl, D. J. Wolford and J. D. Dow, Phys. Rev. Lett.44, 810 (1980).CrossRefGoogle Scholar
  45. 45.
    J. C. M. Henning and J. P. M. Ansems Semicond Sc. Technol.2, 1 (1987).CrossRefGoogle Scholar
  46. 46.
    J. C. M. Henning, J. P. M. Ansems and P. J. Roksnoer, Semicond, Sc. Technol.3, 361 (1987).CrossRefGoogle Scholar
  47. 47.
    J. E. Dmochowski, Z. Wasilewski and R. A. Stradling, unpublished.Google Scholar
  48. 48.
    P. M. Mooney, N. S. Caswell and S. L. Wright, J. Appl. Phys.62, 4786 (1987).CrossRefGoogle Scholar
  49. 49.
    T. N. Theis, B. D. Parker, P. M. Solomon and S. L. Wright, Appl. Phys. Lett.49, 1542 (1986).CrossRefGoogle Scholar
  50. 50.
    T. N. Theis and B. D. Parker, Appl. Surf. Sc.30, 52 (1987).CrossRefGoogle Scholar
  51. 51.
    J. A. Van Vechten and C. D. Thurmond, Phys. Rev. B14, 3539 (1976).CrossRefGoogle Scholar
  52. 52.
    O. Engström and A. Anders, J. Appl. Phys.54, 5240 (1983).CrossRefGoogle Scholar
  53. 53.
    A. K. Saxena, Phys. Status Solidi B96, K76 (1979); A. K. Saxena, Solid State Electron.25, 127 (1982).Google Scholar
  54. 54.
    E. F. Schubert and K. Ploog, Phys. Rev. B30, 7021 (1984).CrossRefGoogle Scholar
  55. 55.
    H. J. Lee and C. T. Choi, J. Appl. Phys.64, 1906 (1988).CrossRefGoogle Scholar
  56. 56.
    A. Mircea, D. Pons and S. Makram-Ebeid in Lecture Notes in Physics 122, New Developments in Semiconductor Physics, eds. F. Beleznay, G. Ferenczi and J. Giber, (Springer-Verlag, Berlin, 1980) pp 69–96.Google Scholar
  57. 57.
    S. Katsumoto, F. Komori, S. Naokatsu and S. Kobayashi, J. Phys. Soc. Jpn.56, 2259 (1987).CrossRefGoogle Scholar
  58. 58.
    T. Fujisawa, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys.29, L388 (1990); T. Fujisawa, J. Yoshino and K. Kukimoto, Proc. 20thICPS, Thessaloniki, 1990, in press.CrossRefGoogle Scholar
  59. 59.
    P. Gibart, D. L. Williamson, J. Moser and P. Basmaji, Phys. Rev. Lett.65, 1144 (1990).CrossRefGoogle Scholar
  60. 60.
    K. A. Khachaturyan, D. D. Awschalom, J. R. Rozen and E. R. Weber, Phys. Rev. Lett.63, 1311 (1989).CrossRefGoogle Scholar
  61. 61.
    S. Katsumoto, N. Matsunaga, Y. Yoshida, K. Sugiyama and S. Kobayashi, Proc. 20th ICPS, Thessaloniki, 1990, in press; S. Katsumoto, N. Matsunga, Y. Yoshida, K. Sugiyama and S. Kobayashi, Jpn. J. Appl. Phys. (in press).Google Scholar
  62. 62.
    T. F. Kuech, D. J. Wolford, R. Potemski, J. A. Bradley, K. H. Kelleher, D. Yan, J. P. Farrell, P. M. S. Lesser and F. H. Pollack, Appl. Phys. Lett.52, 505 (1987).CrossRefGoogle Scholar
  63. 63.
    D. E. Aspnes, S. M. Kelso, R. A. Logan and R. Bhat, J. Appl. Phys.60, 754 (1986).CrossRefGoogle Scholar
  64. 64.
    C. Bosio, J. L. Staehli, M. Guzzi, G. Burri and R. A. Logan, Phys. Rev. B38, 3263 (1988).CrossRefGoogle Scholar
  65. 65.
    G. Oelgart, R. Schwabe, M. Heider and B. Jacobs, Semicond. Sc. Technol.2, 468 (1987).CrossRefGoogle Scholar
  66. 66.
    D. E. Aspnes, Phys. Rev. B14, 5331 (1976).CrossRefGoogle Scholar
  67. 67.
    H. J. Lee, L. Y. Juravel, J. C. Wooley and A. J. Spring-Thorpe, Phys. Rev. B21, 659 (1980).CrossRefGoogle Scholar
  68. 68.
    A. K. Saxena, Phys. Stat. Sol. (b)105, 777 (1981).Google Scholar

Copyright information

© AIME 1991

Authors and Affiliations

  • T. N. Theis
    • 1
  • P. M. Mooney
    • 1
  • B. D. Parker
    • 1
  1. 1.IBM Research DivisionT. J. Watson Research CenterYorktown HeightsUSA

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