Advertisement

Journal of Electronic Materials

, Volume 20, Issue 1, pp 23–33 | Cite as

Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs

  • P. M. Mooney
  • T. N. Theis
  • E. Calleja
Article

Abstract

In this paper we summarize our recent studies of the effects of local alloy disorder on the properties ofDX levels. A single emission rate is observed in GaAs where all Si-donors have identical local environments. In contrast, three discrete emission rates are observed in dilute AlGaAs alloys, suggesting that the group IV donor moves towards the interstitial site, thereby “selecting” three of the twelve surrounding group III atoms. We present evidence for an ordering of theDX levels consistent with Morgan’s model of a deepening potential well for theDX level as Al atoms are subsequently substituted for Ga atoms near the relaxed donor. These conclusions are consistent with earlier calculations of Chadi and Chang.

Key words

AlGaAs DX centers Local alloy disorder 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    P. M. Mooney, Appl. Phys. Reviews, J. Appl. Phys.67, R1 (1990).CrossRefGoogle Scholar
  2. 2.
    D. V. Lang, R. A. Logan and M. Jaros, Phys. Rev.B19, 1015 (1979).Google Scholar
  3. 3.
    G. Ferenczi, in “New Developments in Semiconductor Physics,” eds. F. Beleznay, G. Ferenczi and J. Giber, Springer-Verlag, Vol. 122, 176 (1980).Google Scholar
  4. 4.
    N. M. Johnson, D. J. Bartelink, R. B. Gold and J. F. Gibbons, J. Appl. Phys.50, 4829 (1979).Google Scholar
  5. 5.
    J. A. Pals, Solid State Electron.17, 1139 (1974).CrossRefGoogle Scholar
  6. 6.
    G. Goto, S. Yanagisawa, O. Wada and H. Takanashi, Jpn. J. Appl. Phys.13, 1127 (1974).CrossRefGoogle Scholar
  7. 7.
    E. Calleja, P. M. Mooney, S. L. Wright and M. Heiblum, Appl. Phys. Lett.49, 657 (1986).CrossRefGoogle Scholar
  8. 8.
    L. Dobaczewski and J. Langer, in Defects in Semiconductors, ed. J. H. von Bardeleben, Mater. Sci. Forum, Vols. 10–12 (Trans Tech Publications., Ltd., Switzerland, 1986) p. 399.Google Scholar
  9. 9.
    M. Kaniewska and J. Kaniewski, Solid State Commun.53, 485 (1985).CrossRefGoogle Scholar
  10. 10.
    M. Takikawa and O. Ozeki, Jpn. J. Appl. Phys.24, 303 (1985).CrossRefGoogle Scholar
  11. 11.
    T. N. Theis, P. M. Mooney and S. L. Wright, Phys. Rev. Lett60, 363 (1988).CrossRefGoogle Scholar
  12. 12.
    M. Tachikawa, T. Fujisawa, H. Kukimoto, G. Oomi and S. Minomura, Jpn. J. Appl. Phys.24, L893 (1985).CrossRefGoogle Scholar
  13. 13.
    M. Mizuta, M. Tachikawa, H. Kukimoto and S. Minomura, Jpn. J. Appl. Phys.24, L143 (1985).CrossRefGoogle Scholar
  14. 14.
    P. M. Mooney, N. S. Caswell and S. L. Wright, J. Appl. Phys.62, 4786 (1989).CrossRefGoogle Scholar
  15. 15.
    E. Calleja, P. M. Mooney, T. N. Theis and S. L. Wright, Appl. Phys. Lett.56, 2102 (1990).CrossRefGoogle Scholar
  16. 16.
    T. Baba, M. Mizuta, T. Fujisawa, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys.28, L891 (1989).CrossRefGoogle Scholar
  17. 17.
    P. M. Mooney, T. N. Theis and S. L. Wright, Appl. Phys. Lett.53, 2546 (1988).CrossRefGoogle Scholar
  18. 18.
    P. M. Mooney, T. N. Theis, and S. L. Wright, in “Defects in Semiconductors 15,” ed. G. Ferenczi, Mater. Sci. Forum, Vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1109.Google Scholar
  19. 19.
    T. N. Morgan, in “Defects in Semiconductors 15,” ed. G. Ferenczi, Mater. Sci. Forum, Vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1079.Google Scholar
  20. 20.
    D. J. Chadi and K. J. Chang, Phys. Rev. Lett.61, 873 (1988).CrossRefGoogle Scholar
  21. 21.
    D. J. Chadi and K. J. Chang, Phys. Rev.B39, 10366 (1989).Google Scholar
  22. 22.
    E. Calleja, A. Gomez, E. Munoz and P. Cámara, Appl. Phys. Lett.52, 1877 (1988).CrossRefGoogle Scholar
  23. 23.
    E. Calleja, A. Gomez, A. Criado and E. Munoz, in “Defects in Semiconductors 15,” ed. G. Ferenczi, Mater. Sci. Forum, Vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1115.Google Scholar
  24. 24.
    E. Calleja, F. Garcia, A. Gomez, E. Munoz, P. M. Mooney, T. N. Morgan and S. L. Wright, Appl. Phys. Lett.56, 934 (1990).CrossRefGoogle Scholar
  25. 25.
    J. C. Bourgoin, S. L. Feng and H. J. von Bardeleben, Phys. Rev.B40, 7663 (1989).Google Scholar
  26. 26.
    M. Tachikawa, M. Muzita and H. Kukimoto, Jpn. J. Appl. Phys.23, 1594 (1984).CrossRefGoogle Scholar
  27. 27.
    R. Legros, P. M. Mooney and S. L. Wright, Phys. Rev.B35, 7505 (1987).Google Scholar
  28. 28.
    P. M. Mooney, G. A. Northrop, T. N. Morgan and H. G. Grimmeiss, Phys. Rev.B37, 8298 (1988).Google Scholar

Copyright information

© AIME 1991

Authors and Affiliations

  • P. M. Mooney
    • 1
  • T. N. Theis
    • 1
  • E. Calleja
    • 2
  1. 1.IBM Research DivisionT. J. Watson Research CenterYorktown HeightsUSA
  2. 2.ETSI Telecommunication, Dpto. Ingenieria ElectronicaUniversidad PolitécnicaMadridSpain

Personalised recommendations