Journal of Electronic Materials

, Volume 19, Issue 2, pp 125–129 | Cite as

Studies of interdiffusion in GemSin strained layer superlattices

  • S. J. Chang
  • V. Arbet
  • K. L. Wang
  • R. C. Bowman
  • P. M. Adams
  • D. Nayak
  • J. C. S. Woo
Regular Papers


We present the results on the characterization and interdiffusion behavior of Ge m Si n strained layer superlattices (SLS’s) composed of alternating monolayers of pure Ge and pure Si. Such Ge m Si n SLS’s were grown on top of thick relaxed Ge y Si1-y buffer layers so as to symmetrize the strain distribution and to maintain the pseudomorphic growth of the superlattices. Samples with different superlattice periodicities (i.e. d = dGe + dSi and different layer thickness ratios (i.e. dGe:dSi were prepared for comparison. Raman scattering spectroscopy and x-ray diffraction were used to characterize these samples. Initial results on thermal stability of these Ge m Si n SLS’s are also reported

Key words

Superlattice x-ray Raman interdiffusion 


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Copyright information

© The Mineral,Metal & Materials Society,Inc. 1990

Authors and Affiliations

  • S. J. Chang
    • 1
  • V. Arbet
    • 1
  • K. L. Wang
    • 1
  • R. C. Bowman
    • 2
  • P. M. Adams
    • 2
  • D. Nayak
    • 1
  • J. C. S. Woo
    • 1
  1. 1.Device Research Laboratory, Electrical Engineering DepartmentUniversity of CaliforniaLos Angeles
  2. 2.The Aerospace CorporationLos Angeles

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