Journal of Electronic Materials

, Volume 23, Issue 11, pp 1203–1207

Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures

  • J. Schmitz
  • J. Wagner
  • M. Maier
  • H. Obloh
  • P. Koidl
  • J. D. Ralston
Regular Issue Papers

DOI: 10.1007/BF02649970

Cite this article as:
Schmitz, J., Wagner, J., Maier, M. et al. JEM (1994) 23: 1203. doi:10.1007/BF02649970

Abstract

We investigate unintentional arsenic incorporation during the molecular-beam epitaxial growth of AlSb/InAs/GaSb heterostructures, using both a standard As4 evaporation cell and a valved arsenic cracker. When a standard As4 cell is used, unintentional arsenic concentrations as large as 10–20% can be incorporated into the AlSb and GaSb layers from the background As ambient in the growth chamber, both during growth and on stationary surfaces. This incorporation can be controlled and suppressed with the use of a valved As cracker. Suppression of the As background substantially improves the electrical transport properties of AlSb/InAs/AlSb quantum well structures.

Key words

AlSb/InAs/GaSb heterostructures MBE valved As cracker 

Copyright information

© The Metallurgical of Society of AIME 1994

Authors and Affiliations

  • J. Schmitz
    • 1
  • J. Wagner
    • 1
  • M. Maier
    • 1
  • H. Obloh
    • 1
  • P. Koidl
    • 1
  • J. D. Ralston
    • 1
  1. 1.Fraunhofer-Institut für Angewandte FestkörperphysikFreiburgGermany

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