Journal of Electronic Materials

, Volume 15, Issue 1, pp 21–25 | Cite as

Determination of the si-conducting polymer interfacial properties using A-C impedance techniques

  • G. Nagasubramanian
  • Salvador Stefano
  • Jo Moacanin
Article
Received:
  • 20 Downloads

Abstract

A study was made of the interfacial properties of Poly(pyrrole) (PP) deposited electrochemically onto single crystal p-Si surfaces. The interfacial properties are dependent upon the counterions. The formation of “Quasi-Ohmic” and “non-Ohmic” contacts, respectively, of PP(C1O4) and PP films doped with other counterions (BF4 and para-toluene sulfonate) with p-Si, are explained in-terms of the conductivity of these films and the flat band potential,V fb, of PP relative to that ofp-Si. The PP film seems to passivate or block intrinsic surface states present on thep-Si surface. The differences in the impedance behavior of para-toluene sulfonate doped and C1O4 doped PP are compared.

Key words

Flat-band potential poly(pyrrole) dopant 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.a)
    F.-R. F. Fan, B. L. Wheeler, A. J. Bard, and R. N. Noufi, J. Electrochem. Soc.128, 2042 (1981).CrossRefGoogle Scholar
  2. b).
    R. N. Noufi, A. J. Frank, and A. J. Nozik, J. Am. Chem. Soc.103, 1849 (1981).CrossRefGoogle Scholar
  3. c).
    R. N. Noufi, A. J. Nozik, J. White, and L. F. Warren, J. Electrochem. Soc.129, 2261 (1982)CrossRefGoogle Scholar
  4. 2. a)
    T. Skotheim, I. Lundstrom, and J. Prejza, J. Electrochem. Soc.128, 1625 (1981).CrossRefGoogle Scholar
  5. b).
    R. A. Simon, A. J. Ricco, and M. S. Wrighton, J. Am. Chem. Soc.104, 2031 (1982).CrossRefGoogle Scholar
  6. 3.
    R. Noufi, D. Tench, and L. F. Warren, J. Electrochem. Soc.128, 2596 (1981)CrossRefGoogle Scholar
  7. 4. a)
    K. Kaneto, M. Maxfield, D. P. Nairms, A. G. Mac-Diarmid, and A. J. Heeger, J. Chem. Soc. Faraday Trans. I,78, 3417 (1982).CrossRefGoogle Scholar
  8. b).
    R. B. Kaner, and A. G. MacDiarmid, J. Chem. Soc. Far-aday Trans. I,80, 2109 (1984).CrossRefGoogle Scholar
  9. c).
    Conducting Polymers: Polymeric Organic Metals and Semiconductors. Course offered by the Institute in Materials Science, State Univ. of NY (Nov. 12-14, 1984).Google Scholar
  10. 5. a)
    “Polymers in Electronics,” ACS Symposium Series 242, edited by T. Davidson, Washington, DC 1984.Google Scholar
  11. b).
    G. P. Kittlesen, H. S. White, and M. S. Wrighton, J. Am. Chem. Soc.106, 7389 (1984).CrossRefGoogle Scholar
  12. c).
    Polymers in Electronics, Part I., J. H. Lai, S. A. Jenekhe, R. J. Jensen, and M. Royer, Solid State Technol. #11,164 (1984).Google Scholar
  13. d).
    R. H. Baughman, Contemporary Topics in Polymer Science5, 321 (1984).Google Scholar
  14. e).
    R. S. Potember, and T. 0. Poehler, Polymer materials for Electronic Applications 233 (1982).Google Scholar
  15. f).
    F. L. Carter, J. Vac. Sci. Technol. B,1, 959 (1983).CrossRefGoogle Scholar
  16. g).
    D. Baeriswyl, G. Harbeke, H. Kiess, and W. Meyer, in J. Mort, and G. Pfischer, (eds.), Electronic Properties of Polymers, Wiley, NY (1982).Google Scholar
  17. 6. a)
    G. Horowitz, G. Tourillon, and F. Gamier, J. Electrochem. Soc.131, 151 (1984).CrossRefGoogle Scholar
  18. b).
    K. Rageshwar, M. Kaneki, and A. Yamada, ibid.,130, 38 (1983).CrossRefGoogle Scholar
  19. c).
    M. Ozaki, D. L. Peebles, B. R. Weinberger, C. K. Chiang, S. C. Gau, A. J. Heeger, and A. G. MacDiarmid, Appl. Phys. Lett.35, 83 (1979).CrossRefGoogle Scholar
  20. d).
    0. Inganas, T. Skotheim, and I. Lundstrom, J. Appl. Phys.54, 3636 (1983).CrossRefGoogle Scholar
  21. e).
    O. Inganas, T. Skotheim, and I. Lundstrom, Physica Scripta25, 863 (1982)CrossRefGoogle Scholar
  22. f).
    J. Kanicki, Mol. Cryst. Liq. Cryst.105, 203 (1984).CrossRefGoogle Scholar
  23. 7. a)
    H. S. White, H. D. Abruna, and A. J. Bard, J. Electrochem. Soc.129, 265 (1982)CrossRefGoogle Scholar
  24. b).
    B. A. Parkinson, T. E. Furtak, D. Canfield, K. Kam, and G. Kline, Discuss. Faraday Soc.70, (1980).Google Scholar
  25. c).
    D. Canfield, and B. A. Parkinson, J. Am. Chem. Soc.103, 1281 (1981).CrossRefGoogle Scholar
  26. 8.
    G. Nagasubramanian, and A. J. Bard,J. Electrochem. Soc.128, 1055 (1981).CrossRefGoogle Scholar
  27. 9.
    G. Nagasubramanian, B. L. Wheeler, and A.J. Bard, J. Electrochem. Soc. 130, 385 (1983).CrossRefGoogle Scholar
  28. 10.
    G. Nagasubramanian, B. L. Wheeler, and A. J. Bard, ibid130, 1680 (1983)CrossRefGoogle Scholar
  29. 11.
    R. A. Bull, F.-R. F. Fan, and A. J. Bard, J. Electrochem. Soc.129, 1009 (1982).CrossRefGoogle Scholar
  30. 12.
    E. H. Nicollian, and A. Goetzberger, Bell Syst. Tech.J.46, 1055 (1967).Google Scholar
  31. 13. a)
    A. F. Diaz, and K. K. Kanazawa, in “Extended Linear Chain Compounds” (J. S. Miller, ed), Vol. 3, p. 417 Plenum, NY 1982.Google Scholar
  32. b).
    M. Salmon, A. F. Diaz, A. J. Logan, M. Krounbi, and J. Barbon, Mol. Cryst. Liq. Cryst.83, 1297 (1982).CrossRefGoogle Scholar
  33. 14.
    A. J. Frank, in “Energy Resources Through Photochemistry and Catalysis” (M. Grätzel, ed.), Academic Press, p. 467 (1983).Google Scholar

Copyright information

© The Metallurgical of Society of AIME 1986

Authors and Affiliations

  • G. Nagasubramanian
    • 1
  • Salvador Stefano
    • 1
  • Jo Moacanin
    • 1
  1. 1.California Institute of TechnologyJet Propulsion LaboratoryPasadenaCalifornia

Personalised recommendations