Metallurgical and Materials Transactions A

, Volume 27, Issue 12, pp 3761–3772 | Cite as

The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

  • T. C. Munro
  • B. Gleeson


The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl3 and a thin inner layer of TiAl2, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1100 °C showed that the interdiffusion between the aluminide coating and the γ-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi2, TiSi, and Ti5Si4, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the γ-TiAl ahead of the silicide/γ-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.


Material Transaction Coating Morphology Aluminide Coating Coating Growth Pack Cementation 
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Copyright information

© ASM International & TMS-The Minerals, Metals and Materials Society 1996

Authors and Affiliations

  • T. C. Munro
    • 1
  • B. Gleeson
    • 1
  1. 1.the School of Materials Science and EngineeringThe University of New South WalesSydneyAustralia

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