Czechoslovak Journal of Physics

, Volume 46, Supplement 4, pp 2085–2086 | Cite as

Electrical resistivities in (Ce,La)Ru2Si2 and Ce(Ru,Rh)2Si2

  • Tetsuya Takeuchi
  • Yoshihito Miyako
  • Miguel Ocio
  • Patrick Pari
  • Jacques Hammann
Magnetism (Experiment)

Abstract

The anisotropic behavior in the electrical resistivity below the antiferromagnetic ordering temperature of (Ce0.87La0.13)Ru2Si2 and Ce(Ru0.90Rh0.10)2Si2 was explained by the anisotropic gap opening at the Fermi surface by the nesting effect causing the spin density wave ordering.

Keywords

Electrical Resistivity Fermi Surface Magnetic Phase Transition Baca Anisotropic Behavior 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Institute of Physics, Acad. Sci. CR 1996

Authors and Affiliations

  • Tetsuya Takeuchi
    • 1
  • Yoshihito Miyako
    • 2
  • Miguel Ocio
    • 3
  • Patrick Pari
    • 3
  • Jacques Hammann
    • 3
  1. 1.Low Temperature CenterOsaka UniversityOsakaJapan
  2. 2.Department of Earth and Space Science, Faculty of ScienceOsaka UniversityJapan
  3. 3.Service de Physique de l'Etat CondenseC.E.A. Saclay, Orme des MerisiersGif-sur Yvette CedexFrance

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