Ge films on GaAs: low-temperature electrical properties and application to cryogenic resistance temperature sensors
This report presents our results of both investigation of electrical condution mechanisms in Ge films on GaAs at low temperatures and designing thin-film Ge resistance thermometers. The electrical properties of Ge films on GaAs are determined by potential fluctuations caused by random inhomogeneous distribution of impurities. At low temperatures the conduction through the localized states in the vicinity of the Fermi level prevails. In this report we discuss the electrical conduction mechanisms of such films. Three types (TTR-1, TTR-2 and TTR-3) of thin-film Ge thermometers were fabricated. These temperature sensors may be used in the temperature ranges 1.5 to 350, 77 to 400 and 200 to 450 K, respectively.
KeywordsGaAs Fermi Level Potential Fluctuation Electrical Conduction Mechanism Cryogenic Engineer
- B.I. Shklovskii, Fiz. Tekhn. Poluprov. 7 (1973) 112–118.Google Scholar