Absorption of dislocation phonons by excitons and impurity atoms at low temperatures
Physics of Semiconductors and Dielectrics
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Abstract
A deceleration mechanism of dislocations moving in crystals is studied in this work. It is shown that at low temperatures the main contribution to the dislocation deceleration comes from dislocation interaction with Wannier-Mott excitons and impurity atoms. The calculations are done on the example of a screw dislocation. The dependence of the power losses on the dislocation velocity is studied.
Keywords
Power Loss Impurity Atom Screw Dislocation Ionic Crystal Elastic Field
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© Kluwer Academic/Plenum Publishers 1999