Il Nuovo Cimento D

, Volume 17, Issue 11–12, pp 1781–1786 | Cite as

Vacuum rabi splitting in semiconductor microcavities with applied electric and magnetic fields

  • D. M. Whittaker
  • T. A. Fisher
  • A. M. Afshar
  • M. S. Skolnick
  • P. Kinsler
  • J. S. Roberts
  • G. Hill
  • M. A. Pate
Article

Summary

We describe the use of measurements of vacuum Rabi splitting to extract values for the exciton oscillator strengths in In0.13Ga0.87As-GaAs and GaAs-Al0.2Ga0.8As quantum wells. By varying both field and temperature we determine the changes in the oscillator strength in applied electric and magnetic fields. We show that these are in good agreement with the results of quantum well exciton calculations.

PACS 73.20.Dx

Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) 

PACS 78.20.Jq

Electroopical effects 

PACS 78.20.Ls

Magnetooptical effects 

PACS 32.80

Photon interactions with atoms 

PACS 01.30.Cc

Conference proceedings 

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Copyright information

© Società Italiana di Fisica 1995

Authors and Affiliations

  • D. M. Whittaker
    • 1
  • T. A. Fisher
    • 1
  • A. M. Afshar
    • 1
  • M. S. Skolnick
    • 1
  • P. Kinsler
    • 1
  • J. S. Roberts
    • 2
  • G. Hill
    • 2
  • M. A. Pate
    • 2
  1. 1.Department of PhysicsUniversity of SheffieldSheffieldUK
  2. 2.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK

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