Vacuum rabi splitting in semiconductor microcavities with applied electric and magnetic fields
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We describe the use of measurements of vacuum Rabi splitting to extract values for the exciton oscillator strengths in In0.13Ga0.87As-GaAs and GaAs-Al0.2Ga0.8As quantum wells. By varying both field and temperature we determine the changes in the oscillator strength in applied electric and magnetic fields. We show that these are in good agreement with the results of quantum well exciton calculations.
PACS 73.20.DxElectron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds)
PACS 78.20.JqElectroopical effects
PACS 78.20.LsMagnetooptical effects
PACS 32.80Photon interactions with atoms
PACS 01.30.CcConference proceedings
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- Fisher T. A., Afshar A. M., Skolnick M. S., Whittaker D. M., Roberts J. S., Hill G. andPate M. A., to be published inSolid State Electron.Google Scholar
- Fisher T. A., Afshar A. M. Whittaker D. M., Skolnick M. S., Roberts J. S., Hill G. andPate M. A., to be published inSurf. Sci. Google Scholar