Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice
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We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.
PACS 42.50.MdOptical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation)
PACS 71.35Excitons and related phenomena (including electron-hole drops)
PACS 78.47Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
PACS 78.65Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
PACS 01.30.CcConference proceedings
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