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Il Nuovo Cimento D

, Volume 17, Issue 11–12, pp 1759–1762 | Cite as

Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

  • G. von Plessen
  • T. Meier
  • M. Koch
  • J. Feldmann
  • S. W. Koch
  • P. Thomas
  • E. O. Göbel
  • K. W. Goossen
  • J. M. Kuo
  • R. F. Kopf
Article

Summary

We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.

PACS 42.50.Md

Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation) 

PACS 71.35

Excitons and related phenomena (including electron-hole drops) 

PACS 78.47

Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter 

PACS 78.65

Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds) 

PACS 01.30.Cc

Conference proceedings 

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Copyright information

© Società Italiana di Fisica 1995

Authors and Affiliations

  • G. von Plessen
    • 1
  • T. Meier
    • 1
  • M. Koch
    • 1
  • J. Feldmann
    • 1
  • S. W. Koch
    • 1
  • P. Thomas
    • 1
  • E. O. Göbel
    • 1
  • K. W. Goossen
    • 2
  • J. M. Kuo
    • 2
  • R. F. Kopf
    • 2
  1. 1.Department of Physics and Materials Sciences CenterPhilipps University of MarburgMarburgGermany
  2. 2.AT&T Bell LaboratoriesHolmdelUSA

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