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Il Nuovo Cimento D

, Volume 17, Issue 11–12, pp 1699–1703 | Cite as

Recombination processes in strain-induced InGaAs quantum dots

  • J. Sandmann
  • S. Grosse
  • J. Feldmann
  • H. Lipsanen
  • M. Sopanen
  • J. Tulkki
  • J. Ahopelto
Article

Summary

We have performed time-integrated and time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs/GaAs quantum dots. The optical spectra of these dot structures exhibit large quantization effects together with remarkably low inhomogeneous broadenings of the respective excitonic transitions. Thus a detailed investigation of the relaxation and recombination dynamics within the distinct electronic dot states becomes feasible. We find that the initial relaxation of optically generated carriers down to the lowest dot states is very efficient. This fast thermalization is ascribed to Coulomb scattering between carriers confined in dot states and carriers located in the higher-energetic quantum well states.

PACS 73.20.Dx

Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) 

PACS 71.50

Localized single-particle electronic states (including impurities) 

PACS 78.55.Cr

III–V compounds and systems 

PACS 78.55

Photoluminescence 

PACS 78.47

Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter 

PACS 01.30.Cc

Conference proceedings 

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Copyright information

© Società Italiana di Fisica 1995

Authors and Affiliations

  • J. Sandmann
    • 1
    • 4
  • S. Grosse
    • 1
    • 4
  • J. Feldmann
    • 1
    • 4
  • H. Lipsanen
    • 2
  • M. Sopanen
    • 2
  • J. Tulkki
    • 2
  • J. Ahopelto
    • 3
  1. 1.Department of PhysicsUniversity of MarburgMarburgGermany
  2. 2.Optoelectronics LaboratoryHelsinki University of TechnologyEspooFinland
  3. 3.VTT ElectronicsEspooFinland
  4. 4.Materials Sciences CenterUniversity of MarburgMarburgGermany

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