On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field
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Summary
An attempt is made to study the thermoelectric power of the carriers in quantum well of A 3 II B 2 V semiconductors, taking Cd3As2 quantum well as an example. It is found, on the basis of newly derived 2DE−k s dispersion relation by including various types of anisotropies in the energy spectrum that the thermoelectric power decreases with increasing electron concentration and decreasing film thickness respectively. In addition, the corresponding well-known results for bulk specimens of isotropic parabolic energy bands are also obtained from the expressions derived.
PACS 72.20
Conductivity phenomena in semiconductors and insulatorsPreview
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References
- [1]R. Dingle, W. Weigmann andC. H. Henry:Phys. Rev. Lett.,33, 827 (1974);H. L. Stormer, A. C. Gossard andW. Weigmann:Appl. Phys. Lett.,39, 912 (1981).CrossRefADSGoogle Scholar
- [2]N. T. Linch:Festkorperprobleme,23, 227 (1983).Google Scholar
- [3]D. R. Scifres, C. Lindstrom, R. D. Burnham, W. Streifer andT. L. Poali:Electron. Lett.,19, 170 (1983).Google Scholar
- [4]P. L. Solomon:Proc. IEEE,70, 489 (1982).CrossRefGoogle Scholar
- [5]K. Woodbridge, P. Blood, E. D. Fletcher andP. J. Huly Appl. Phys. Lett.,45, 16 (1984).CrossRefADSGoogle Scholar
- [6]O. Aina, M. Mattingly, F. Y. Juan andP. K. Bhattacharya:Appl. Phys. Lett.,50, 43 (1987).CrossRefADSGoogle Scholar
- [7]
- [8]D. A. B. Miller, D. S. Chemla, T. C. Damen, T. H. Wood, A. C. Burrus, A. C. Gossard andW. Weigmann:IEEE J. Quantum Electron.,21, 1462 (1985).CrossRefADSGoogle Scholar
- [9]L. L. Chang, H. Esaki, C. A. Chang andL. Esaki:Phys. Rev. Lett.,38, 1489 (1977).CrossRefADSGoogle Scholar
- [10]
- [11]F. Y. Juang, Y. Nashimoto andP. K. Bhattacharya:J. Appl. Phys.,58, 1986 (1986).CrossRefADSGoogle Scholar
- [12]W. Zawadzki:Adv. Phys.,23, 435 (1974).CrossRefADSGoogle Scholar
- [13]
- [14]I. M. Tsidilkovski:Band Structure of Semiconductors (Pergamon Press, London, 1982), p. 313.Google Scholar
- [15]W. Zawadzki: in2D Systems, Heterostructures and SLs, edited byG. Bauer, F. Kuchas andH. Hainich,Springer Ser., Solid State Sciences,53 (Springer-Verlag, Berlin, Heidelberg, 1984), p. 79.Google Scholar
- [16]
- [17]
- [18]D. S. Chemla, P. J. Kupeck, D. S. Robertson andR. C. Smith:Opt. Commun.,3, 29 (1971).CrossRefADSGoogle Scholar
- [19]J. L. Shay, K. J. Beckmann, E. Buehler andJ. H. Wernick:Appl. Phys. Lett.,23, 226 (1973).CrossRefADSGoogle Scholar
- [20]
- [21]
- [22]J. J. Hopfield:J. Phys. Chem. Solids.,15, 97 (1960).CrossRefADSGoogle Scholar
- [23]H. Kildal:Phys. Rev. B,10, 5082 (1974).CrossRefADSGoogle Scholar
- [24]J. L. Shay andJ. H. Wernick:Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications (Pergamon Press, London, 1975).Google Scholar
- [25]
- [26]
- [27]V. A. Vilkotskii, D. S. Domanevskii, R. D. Kakanov andV. V. Krasovskii:Sov. Phys. Semicond.,13, 553 (1979).Google Scholar
- [28a]J. S. Blakemore:Semiconductor Statistic (Pergamon Press, London, 1962), p. 79.Google Scholar
- [28b]A. N. Chakravarti, K. P. Ghatak, A. Dhar, K. K. Ghosh andS. Ghosh:Acta Physica Polon. A.,60, 151 (1981).Google Scholar
- [29]A. N. Chakravarti, K. P. Ghatak, A. Dhar, K. K. Ghosh andS. Ghosh:Czech. J. Phys. B,33, 65 (1983).CrossRefADSGoogle Scholar
- [30]B. R. Nag:Electron Transport in Compound Semiconductors (Springer-Verlag, Berlin, Heidelberg, New York, N.Y., 1980).Google Scholar
- [31]M. Abramowtiz andI. A. Stegun:Handbook of Mathematical Functions (Dover, New York, N.Y., 1965).Google Scholar
- [32]E. K. Arushanov, A. F. Knyazev, A. N. Nateprov andS. I. Radautsan:Sov. Phys. Semicond.,15, 828 (1981).Google Scholar
- [33]S. I. Radautsan, F. A. Arushanov, A. N. Nateprov andG. P. Chuiko:Cadmium Arsenide and Phosphide (Kishinev, USSR, 1986).Google Scholar
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