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Il Nuovo Cimento D

, Volume 18, Issue 5, pp 621–633 | Cite as

Influence of radiation-induced clusters on transport properties of silicon

  • E. Borchi
  • M. Bruzzi
  • U. Biggeri
  • S. Lazanu
Article
  • 26 Downloads

Summary

A calculation method for the scattering cross-section σ of charged carriers on radiation-induced cluster defects has been developed using a spherical cluster model with rectangular potential barrier shape, of radius and height of 15 nm and 0.6 eV, respectively. Values of the cluster cross-section around 2·10−11 cm2 have been obtained for charged carrier energies from 10−4 eV to over 600 eV. Applying the relaxation-time approximation of the Boltzmann equation, the influence of clusters on silicon transport properties has been observed to be close to the acoustic-phonon one. The dependence of the Hall factor on radiation-induced clusters has been determined numerically for temperatures ranging from 5 K to 400 K. The results indicate that the presence of clusters of such dimensions would not change significantly the Hall coefficientRH.

PACS 72.20

Conductivity phenomena in semiconductors and insulators 

PACS 71.10

General theories and computational techniques (including many-body perturbation theory, density-functional theory, atomic sphere approximation methods, Fourier decomposition methods, etc.) 

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Copyright information

© Società Italiana di Fisica 1996

Authors and Affiliations

  • E. Borchi
    • 1
  • M. Bruzzi
    • 1
  • U. Biggeri
    • 1
  • S. Lazanu
    • 2
  1. 1.Dipartimento di Energetica «Sergio Stecco»FirenzeItaly
  2. 2.Institute for Atomic PhysicsBucharestRomania

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