Il Nuovo Cimento D

, Volume 1, Issue 1, pp 33–40 | Cite as

Quantum size effects and negative resistance in MOS structure with polycrystalline InSb (n-type)

  • G. Burrafato
  • A. Pennisi
  • F. Simone
  • S. O. Troja
  • N. A. Mancini
Article
Received:

Summary

The tunnel characteristics (J vs. V) of Al−Al2O3−InSb (n type) structures with thin (100÷400)Å semiconducting electrode are presented. They are analysed by utilizing the model proposed by Chang, Esaki and Styles. The data obtained by a nonlinear best fit on experimental points describe the MOS structure and the negative-resistance region exibited by the characteristics. Furthermore, the semiconductor gap shows a dependence on the thickness and this variation is explainable with the quantum effects presence in the thinnest films.

Keywords

InSb Tunnel Junction Quantum Size Effect Negative Resistance Semiconducting Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Riassunto

Le caratteristiche tunnel (J vs. V) di strutture Al−Al2O3−InSb (n type) con eletrodo semiconduttore sottile (100÷400) Å sono presentate. Esse sono analizzate utilizzando il modello proposto da Chang, Esaki e Styles; i dati ottenuti da un adattamento ottimale non lineare sui punti sperimentali descrivono la struttura MOS e la regione a resistenza negativa esibita dalle caratteristiche. Inoltre si osserva che il gap del semiconduttore varia con lo spessore; tale variazione è interpretata mediante la presenza di effetti quantistici di dimensione nei films più sottili.

Резюме

Приводятся туннельные характеристики (J в зависимости отV) для Al−Al2O3−InSb (n-типа) структур с тонким (100÷400) Å сверхпроводящим злектродом. Эти нарактеристики анализируются с помощью модели, предложенной Ченгом, Есаки и Стайлсом. Данные, полученные путем нелинейной подгонки, описывают MOS структуры и область отрицательного сопротивления, обнаруженного в характеристиках. Кроме того, щель в свернпроводнике обнаруживает зависимость от толщины. Изменение щели объясняется наличием квантовых эффектов, связанных с размерами образцов, в тончайших пленках.

This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. (1).
    V. Bezek:J. Phys. Chem. Solids,27, 815, 821 (1966).CrossRefGoogle Scholar
  2. (2).
    B. A. Tavger andV. Ya. Demikhovskii:Sov. Phys. Usp. (English translation),11, 644 (1968).CrossRefGoogle Scholar
  3. (3).
    A. A. Cottey:Phys. Status Solidi B,102, 577 (1980).Google Scholar
  4. (4).
    E. L. Wolf:Solid State Phys.,30, 1 (1975).Google Scholar
  5. (5).
    V. N. Lutskii, D. N. Korneev andM. I. Elinson:JETP Lett.,4, 179 (1966).ADSGoogle Scholar
  6. (6).
    D. Romarch andP. Lami:Thin Solid Films,36, 71 (1976).CrossRefGoogle Scholar
  7. (7).
    M. Altwein andH. Finkenrarth:Phys. Status Solidi B,72, 413 (1975).Google Scholar
  8. (8).
    R. C. Jaklevic andJ. Lambe:Phys. Rev. B,12, 4146 (1976).CrossRefADSGoogle Scholar
  9. (9).
    G. Burrafato, G. Giaquinta, N. A. Mancini, A. Pennisi, S. O. Troja andR. Habel:J. Phys. Chem. Solids.,37, 519 (1976).CrossRefGoogle Scholar
  10. (10).
    G. Burrafato, A. Pennisi, F. Simone, S. O. Troja, C. Di Mauro, F. Micalizzi, G. Giaquinta andN. A. Mancini:Lett. Nuovo Cimento,22, 467 (1978).Google Scholar
  11. (11).
    L. Holland:Vacuum Deposition of Thin Films (New York, N. Y., 1956).Google Scholar
  12. (12).
    S. E. Townshend andA. D. C. Grassie:J. Phys. D,13, 59 (1980).CrossRefADSGoogle Scholar
  13. (13).
    L. Esaki andP. J. Styles:Phys. Rev. Lett.,16, 1108 (1966).CrossRefADSGoogle Scholar
  14. (14).
    L. L. Chang:J. Appl. Phys.,19, 1455 (1968).CrossRefGoogle Scholar
  15. (15).
    K. L. Chopra:Thin Film Phenomena (New York, N. Y., 1969).Google Scholar
  16. (16).
    E. O. Kane:J. Phys. Chem. Solids,1, 249 (1957).CrossRefGoogle Scholar
  17. (17).
    L. L. Chang, P. J. Styles andL. Esaki:J. Appl. Phys.,38, 4440 (1967).CrossRefGoogle Scholar

Copyright information

© Società Italiana di Fisica 1982

Authors and Affiliations

  • G. Burrafato
    • 1
    • 2
    • 3
  • A. Pennisi
    • 1
    • 2
    • 3
  • F. Simone
    • 1
    • 2
    • 3
  • S. O. Troja
    • 1
    • 2
    • 3
  • N. A. Mancini
    • 1
    • 2
    • 3
    • 4
  1. 1.Istituto di Fisica dell'UniversitàCatania
  2. 2.Unità di CataniaGruppo Nazionale di Struttura della Materia del C.N.R.CataniaItalia
  3. 3.Centro Siciliano di Fisica Nucleare e di Struttura della MateriaCatania
  4. 4.Centro Universitario di Microscopia ElettronicaCatania

Personalised recommendations