, Volume 11, Issue 3–4, pp 306–314 | Cite as

Nanoionics of advanced superionic conductors

  • A. L. Despotuli
  • A. V. Andreeva
  • B. Rambabu


New scientific direction — nanoionics of advanced superionic conductors (ASICs) was proposed. Nanosystems of solid state ionics were divided onto two classes differing by an opposite influence of crystal structure defects on the ionic conductivity σi (energy activationE): I) nanosystems on the base compounds with initial small σi (large values ofE); and II) nanosystems of ASICs (nano-ASICs) withE ≈0.1 eV.

The fundamental challenge of nanoionics as the conservation of fast ion transport (FIT) in nano-ASICs on the level of bulk crystal was first recognized and for the providing of FIT in nano-ASICs the conception of structure-ordered (coherent) ASIC//indifferent electrode (IE) heteroboundaries was proposed. Nano-ASIC characteristic parameterP=d Q (d is the thickness of ASIC layer with the defect crystal structure at the heteroboundary, and λ Q is the screening length of charge for mobile ions of the bulk of ASIC) was introduced. The criterion for a conservation of FIT in nano-ASIC isP≈1. It was shown that at the equilibrium conditions the contact potentialsV at the ASIC//IE coherent heterojunctions in nano-ASICs areV«k BT/e. Interface engineering approach “from advanced materials to advanced devices” was proposed as fundamentals for the development of applied nanoionics. The possibility for creation on the base of ASIC//IE coherent heterojunctions of the efficient energy and power devices (sensors and supercapacitors with specific capacity ≈10−4 F/cm2 and maximal frequencies 109–100 Hz,) suited for micro(nano)electronics, microsystem technology and 5 Gbit DRAM was pointed out.


Specific Capacity Efficient Energy Electrical Power Generation Solid State Ionic Bulk Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© IfI - Institute for Ionics 2005

Authors and Affiliations

  • A. L. Despotuli
    • 1
  • A. V. Andreeva
    • 1
  • B. Rambabu
    • 1
    • 2
  1. 1.Institute of Microelectronics Technology & High Purity Materials RASMoscow RegionRussia
  2. 2.Southern University and A&M CollegeBaton RougeUSA

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