The effect of annealing on residual stress and dislocation propagation in silicon slices with damaged layer induced by scribing
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Abstract
The effect of annealing on residual stress and dislocation propagation in silicon slices with a damaged layer induced by diamond scribing, laser scribing and diamond blade cutting was studied by infra-red photoelastic measurements and dislocation pit observations. Residual stress and dislocation propagation both showed clear annealing temperature dependence at temperatures above 500° C, although the residual stress was greatly reduced by a small degree of dislocation propagation. The experimental results can be explained using the stress recovery theory by the model of the damaged layer with a mosaic crystal layer and a single crystal layer with micro-cracks and dislocations.
Keywords
Polymer Silicon Residual Stress Small Degree Crystal Layer
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References
- 1.A. S. T. Badrick, K. E. Puttick andF. H. A. El-Deghaidy,J. Phys. D: Appl. Phys. 12 (1979) 909.CrossRefGoogle Scholar
- 2.
- 3.
- 4.
- 5.
- 6.Idem, J. Electrochem. Soc. 127 (1980) 179.Google Scholar
- 7.M. W. Jenkins,ibid. 124 (1977) 757.Google Scholar
- 8.A. H. Cottrell, “Dislocations and Plastic Flow in Crystals” (Clarendon Press, Oxford, 1953) p. 187.Google Scholar
- 9.H. Alexander andP. Haasen, “Solid State Physics”, Vol. 22, edited by F. Seitz and D. Turnbull (Academic Press, New York and London, 1968) p. 27.Google Scholar
- 10.A. George, C. Escaravage, G. Champier andW. Schroter,Phys. Stat. Sol. (b) 63 (1972) 483.Google Scholar
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© Chapman and Hall Ltd 1981