Journal of Materials Science

, Volume 5, Issue 4, pp 314–325 | Cite as

The strength and oxidation of reaction-sintered silicon nitride

  • A. G. Evans
  • R. W. Davidge
Papers

Abstract

The structure of reaction-sintered silicon nitride is studied using scanning electron and optical microscopy at various stages during nitriding, for a range of nitriding and compacting conditions. The strength is then evaluated and interpreted in terms of the microstructure. It is found that fracture always occurs in a brittle manner by the extension of the largest pores. The effects of prolonged annealing in air above 1000† C on both the structure and strength are investigated. At 1400† C, cristobalite is formed. If the temperature is then maintained above 250† C, the strength is enhanced, but below this temperature the oxide layer cracks and reduces the strength.

Keywords

Oxidation Polymer Silicon Microstructure Microscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1970

Authors and Affiliations

  • A. G. Evans
    • 1
  • R. W. Davidge
    • 1
  1. 1.Materials Development DivisionAEREHarwell, DidcotUK

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