Advertisement

Journal of Materials Science

, Volume 19, Issue 11, pp 3687–3691 | Cite as

Correlation between electron spin resonance, electrical conductivity and optical absorption edge of co-evaporated thin films of the dielectric system SiO/V2O5

  • F. A. S. Al-Ramadhan
  • K. I. Arshak
  • C. A. Hogarth
Papers

Abstract

Measurements of electron spin resonance, d.c. and a.c. electrical conduction and optical absorption of thin film samples of SiO/V2O5 prepared by a co-evaporation process at a pressure in the range 8×10−6 to 3×10−5 torr are reported. It is found that the spin density of the mixed system decreases by about one order of magnitude compared with that of an SiO film deposited under similar conditions. This reduction correlates with the d.c. electrical conductivity which also decreases as the V2O5 content of the complex SiO/V2O5 films increases. At the same time the optical energy gap also decreases. At lower temperatures (down to 198 K), a.c. conductance measurements give evidence of hopping conduction. D.c. conductance shows a transition from hopping conduction to free-band (extended state) conduction at about 263 K.

Keywords

Thin Film Electrical Conductivity Electron Spin Resonance Similar Condition Optical Absorption 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    C. A. Hogarth andL. A. Wright, Proceedings of the International Conference on Physics of Semiconductors, Moscow (1968) p. 1279.Google Scholar
  2. 2.
    H. Vardhan, G. C. Dubey andR. A. Singh,Thin Solid Films 8 (1971) 55.CrossRefGoogle Scholar
  3. 3.
    G. C. Dubey, K. Sahu, T. R. Reddy andG. C. Trigunayat,ibid. 61 (1979) L17.CrossRefGoogle Scholar
  4. 4.
    P. A. Timson andC. A. Hogarth,ibid. 10 (1972) 321.CrossRefGoogle Scholar
  5. 5.
    M. Ilyas andC. A. Hogarth,J. Mater. Sci. Lett. 2 (1983) 535.CrossRefGoogle Scholar
  6. 6.
    K. I. Arshak, F. A. S. Al-Ramadhan andC. A. Hogarth,J. Mater. Sci. 19 (1984) 1505.CrossRefGoogle Scholar
  7. 7.
    N. F. Mott andE. A. Davis, “Electronic Processes in Non-Crystalline Materials” (Clarendon Press, Oxford, 1979).Google Scholar
  8. 8.
    P. A. Thomas, D. Lépine andD. Kaplan, “Tetrahedrally Bonded Amorphous Semiconductors” (American Institute of Physics, New York, 1974) p. 47.Google Scholar
  9. 9.
    M. Pollak andT. H. Geballe,Phys. Rev. 122 (1961) 1742.CrossRefGoogle Scholar
  10. 10.
    J. Tauc,Phys. Status Solidi 15 (1966) 627.Google Scholar
  11. 11.
    S. K. Bahl andS. M. Bhagat,J. Non-Cryst. Solids 17 (1975) 409.CrossRefGoogle Scholar
  12. 12.
    S. K. Bahl, S. M. Bhagat andR. Glosser,Solid State Commun. 13 (1973) 1159.CrossRefGoogle Scholar
  13. 13.
    Idem, Proceedings of the 5th International Conference on Amorphous and Liquid Semiconductors, Garmisch, edited by J. Stuke and W. Brenig (Taylor and Francis, London, 1974) p. 69.Google Scholar
  14. 14.
    S. Koc, M. Závětová andJ. Zemek,Thin Solid Films 10 (1972) 165.CrossRefGoogle Scholar
  15. 15.
    M. L. Knotek andT. M. Donovan,Phys. Rev Lett. 30 (1973) 652.CrossRefGoogle Scholar
  16. 16.
    S. C. Moss, P. Flynn andL. O. Bauer,Phil. Mag. 27 (1973) 441.Google Scholar
  17. 17.
    M. H. Brodsky andR. S. Title,Phys. Rev. Lett. 23 (1969) 581.CrossRefGoogle Scholar

Copyright information

© Chapman and Hall Ltd. 1984

Authors and Affiliations

  • F. A. S. Al-Ramadhan
    • 1
  • K. I. Arshak
    • 1
  • C. A. Hogarth
    • 1
  1. 1.Department of PhysicsBrunel UniversityUxbridgeUK

Personalised recommendations