Correlation between electron spin resonance, electrical conductivity and optical absorption edge of co-evaporated thin films of the dielectric system SiO/V2O5
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Measurements of electron spin resonance, d.c. and a.c. electrical conduction and optical absorption of thin film samples of SiO/V2O5 prepared by a co-evaporation process at a pressure in the range 8×10−6 to 3×10−5 torr are reported. It is found that the spin density of the mixed system decreases by about one order of magnitude compared with that of an SiO film deposited under similar conditions. This reduction correlates with the d.c. electrical conductivity which also decreases as the V2O5 content of the complex SiO/V2O5 films increases. At the same time the optical energy gap also decreases. At lower temperatures (down to 198 K), a.c. conductance measurements give evidence of hopping conduction. D.c. conductance shows a transition from hopping conduction to free-band (extended state) conduction at about 263 K.
KeywordsThin Film Electrical Conductivity Electron Spin Resonance Similar Condition Optical Absorption
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