A cems study of119Sn ion-implanted into Ni
Implantation Radiation Damage after Effects
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Abstract
Conversion electron Mössbauer spectroscopy (CEMS) was applied to study the behaviour of119Sn atoms implanted into Ni at the accelerating energy of 100–400KeV and doses of 5×1015–5×1016 ions/cm2 at room temperature. All CEMS spectra were measured at room temperature and successfully analyzed by two components. The energy and dose dependence of CEMS spectra were well explained by the depth distribution of119Sn atoms.
Keywords
Spectroscopy Thin Film Depth Distribution Dose Dependence Conversion Electron
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© J.C. Baltzer A.G., Scientific Publishing Company 1988