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Characterization of solar grade silicon by Neutron Activation Analysis

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Abstract

An analytical method using neutron activation was developed in order to orientate and check different silicon elaboration processes either as solid ingots or ribbon shaped. This method without chemical separation after irradiation implies the use of a high efficiency semiconductor detector. A particular attention was paid to different causes of error and to the detection limits really obtained. These limits range from 109 to 1015 at.cm−3 for about 30 elements systematically locked for after a 72-h irradiation.

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Revel, G., Deschamps, N., Dardenne, C. et al. Characterization of solar grade silicon by Neutron Activation Analysis. Journal of Radioanalytical and Nuclear Chemistry Letters 85, 137–150 (1984). https://doi.org/10.1007/BF02164380

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Keywords

  • Silicon
  • Physical Chemistry
  • Inorganic Chemistry
  • Detection Limit
  • Activation Analysis