Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

  • F. Jain
  • C. Chung
  • R. LaComb
  • M. Gokhale


Bipolar resonant tunneling heterotransistor structures, which can be configured to operate as multi-state or as bistable lasers, are described. Both edge and surface-emitting structures are presented. Computations of various optoelectronics parameters including confinement factor, threshold current density, and cavity modes for a stripe-geometry structure are presented. In addition, simulations of base and collector currents are given for a resonant tunneling transistor to demonstrate the feasibility of lasing in the base region.


Base Region Cavity Mode Collector Current Resonant Tunneling Threshold Current Density 
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  1. 1.
    Y. Kawamura, K. Wakita, H. Asahi, and K. Oe, “Optically Bistable Operation in InGaAs/InAlAs MQW Laser Diodes Using Resonant Tunneling Effect,” Electron. Lett.23, pp. 719–721, 1987.Google Scholar
  2. 2.
    T. Numai, M. Sugimoto, I. Ogura, H. Kosaka, and K. Kasahara, J. Appl. Phys. Lett.58, pp. 1250–1252 March, 1991.Google Scholar
  3. 3.
    F. Jain and C. Chung, “Resonant Tunneling Transistor Lasers: A New Approach in Designing Optoelectronically Triggered Lasers and OEICs,” Proc. of IEEE Princeton Section Sarnoff Symposium, March 27, 1992.Google Scholar
  4. 4.
    I. Grave, S.C. Kan, G. Griffel, S.W. Wu, A. Sa'ar, and A. Yariv, “Monolithic Integration of a Resonant Tunneling Diode and a Quantum Well Semiconductor Laser,” Appl. Phys. Lett.58, pp. 110–112, January 1991.CrossRefGoogle Scholar
  5. 5.
    Y. Kawamura, H. Asai, S. Matsuo, and C. Amano, IEEE J. of Quantum Electronics,QE-18, pp. 308–314, 1992.CrossRefGoogle Scholar
  6. 6.
    T. Futatsugi, Y. Yamaguchi, S. Muto, N. Yokoyama, and A. Shibatomi, J. Appl. Phys.,65, 1771–1775, February 1989.CrossRefGoogle Scholar
  7. 7.
    J-S. Wu, C-Y. Chang, C-P. Lee, K-H. Chang, D-G. Liu, and D-C. Liou, Japan. J. Appl. Phys,30, pp. L160-L162, February, 1991.Google Scholar
  8. 8.
    M.A. Read, W.R. Frensley, R.J. Matyi, J.N. Randall, and A.C. Seabaugh, “Realization of a Three-terminal Resonant Tunneling Device: The Bipolar Quantum Resonant Tunneling Transistor,” Appl. Phys. Lett.,54, pp. 1034–1037, March 1989.CrossRefGoogle Scholar
  9. 9.
    V. Ryzill and G. Khrenov, “The Bistable Effect in Bipolar Transistor with Resonant Tunneling Collector Structure” Semiconductor Sci. Tech. 7, pp. 1178–1182, 1992.CrossRefGoogle Scholar
  10. 10.
    B.R. Ryum, Ibrahim M. Abdel-Motaleb, “A Gummel Poon model for Abrupt and Graded Heterojunction Bipolar Transistors”, Solid State Elec. Vol 33, No7 p869–880, 1990.CrossRefGoogle Scholar
  11. 11.
    C. Parikh and F.Lindholm,“A New Charge-ControlModel for Single- and Double Heterojunction Bipolar Transistors”IEEE Trans. Elec.Dev. Vol 39,No.6 june 1992.Google Scholar
  12. 12.
    Tsu and Esaki, Appl. Phys. Lett. 22, 563 (1973)CrossRefGoogle Scholar
  13. 13.
    K. Brennan, “A Self Consistent Analysis of Resonant Tunnelling in a two barrier-one well microstructure”, J. Appl. Phys. 62, 6 1987.CrossRefGoogle Scholar
  14. 14.
    M. Cahay, M. McLennan, S. Datta, M. S. Lundstorm, Appl. Phys. Lett. 50, 612, 1986CrossRefGoogle Scholar
  15. 15.
    F. Jain, C. Chung and M. Gokhale, “Multiple p-n Junction Laser Heterostructures: A New Approach in Designing Optoelectronically Triggered Lasers and OEICs”, Proc, 1991 Int. Sem. Dev. Res. Symp. (ISDRS), pp 201–204, December 4–6, 1991 (Charlettsville, VA).Google Scholar
  16. 16.
    J.K. Bulter and J.B. Delaney, “A Rigorous Boundary Value Solution for the Lateral Modes of Stripe Geometry Injection Lasers”, IEEE Quantum Electronics,QE-14, pp. 507–513, 1978.Google Scholar
  17. 17.
    J. Buus, “The Effective Index Method and Its Application to Semiconductor Lasers”, IEEE J. of Quantum Electronics,QE-18, pp. 1083–1089, 1982.CrossRefGoogle Scholar
  18. 18.
    H.C. Casey, Jr. and M.B. Panish, Heterostructure Lasers, Academic Press, NY 1978.Google Scholar
  19. 19.
    Y.J. Yang, T.G. Dziura, S.C. Wang, G. Du, and S. Wang, “Single-Mode Operation of Mushroom Structure Surface Emitting Lasers”, IEEE Photonics Technology Lett.,3, pp. 9–11, January 1991.CrossRefGoogle Scholar
  20. 20.
    R.D. Lareau, L. Friedman, and R.A. Soref, Electronics Lett.,26, pp. 1653–1655, September 1990.Google Scholar
  21. 21.
    F.Jain, C.Chung, R. LaComb and M.Gokhale, “Resonant Tenelling Transistors Lasers For Multi-State Switching and Bistable Operation”IEEE LEOS 1992 Digest, pp. 602–603, Nov. 16–19, Boston.Google Scholar
  22. 22.
    D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, and C.A Burrus, “Electrical Field Dependence of Optical Absorption Near The Band Gap of Quantum-Well Structures” Phys.Rev.B,32, pp1043–1060, July 15, 1985.CrossRefGoogle Scholar
  23. 23.
    F. Capasso, S. Sen, F. Beltram, and A.Y. Cho, “Resonant Tunneling and Superlattice Devices: Physics and Circuits,” in Physics of Quantum Electronic Devices, Springer-Verlag, Berlin Heideiberg, (1990).Google Scholar
  24. 24.
    S.Sen F.Cappasso, A.Y. Cho, D.L.Sivco:“Stacked Double Barriers and Their Applications in Novel Multi-State Resonant Tunelling Bipolar Devices”, Inst. Phys. Conf. Ser.605, 96(1988)Google Scholar
  25. 25.
    F.Jain, K. Bhattacharjee and T. Grudkowski, “Recent Developments in Multiple Quantum Well Acousto-Optic Modulator Structures”, Proc. IEEE Ultrasonics Symposium, pp. 529–536, Dec. 8–11, 199.Google Scholar
  26. 26.
    R. Lang, J. Kim, A. Larsson, A. Nouhi, J. Cody, S. Lin, D. Psaltis, R. Tiberio, G. Porkolab and E. D. Wolf, “Optoelectronic Master Chip for Optical Coupling”, SPIE Proc.1563, pp 1–7, 1991.Google Scholar
  27. 27.
    J. Jewell, P. Harbison, A. Scherer, Y. Lee and T. Florez, “Vertical Cavity Surface-Emitting Lasers: Design, Growth Fabrication, Characterization.”, IEEE J. Quantum Elect.,QE-27, No. 6, June 1991.Google Scholar

Copyright information

© Plenum Publishing Corporation 1993

Authors and Affiliations

  • F. Jain
    • 1
  • C. Chung
    • 1
  • R. LaComb
    • 1
  • M. Gokhale
    • 1
  1. 1.Electrical and Systems EnginneringUniversity of ConnecticutStorrs

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