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Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation

  • F. Jain
  • C. Chung
  • R. LaComb
  • M. Gokhale
Article

Abstract

Bipolar resonant tunneling heterotransistor structures, which can be configured to operate as multi-state or as bistable lasers, are described. Both edge and surface-emitting structures are presented. Computations of various optoelectronics parameters including confinement factor, threshold current density, and cavity modes for a stripe-geometry structure are presented. In addition, simulations of base and collector currents are given for a resonant tunneling transistor to demonstrate the feasibility of lasing in the base region.

Keywords

Base Region Cavity Mode Collector Current Resonant Tunneling Threshold Current Density 
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Copyright information

© Plenum Publishing Corporation 1993

Authors and Affiliations

  • F. Jain
    • 1
  • C. Chung
    • 1
  • R. LaComb
    • 1
  • M. Gokhale
    • 1
  1. 1.Electrical and Systems EnginneringUniversity of ConnecticutStorrs

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