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Establishment of a dynamic model for the p-Ge far IR laser

  • Paul D. Coleman
  • Jonathan J. Wierer
Article

Abstract

Using new experimental data from modeling the p-Ge laser pulse plus literature data, basic laser parameters are obtained so that one can solve the laser equations of Pantell and Puthoff to obtain formulas for calculating all laser quantities of interest. Values, calculated using the formulas, such as gain, saturation intensity, pump population differences, power generated, output coupling, efficiency, etc. are in excellent agreement with available experimental data. This work contributes to problems in determining laser line transitions, the laser cycle, and the optimization of the laser performance.

Keywords

Experimental Data Laser Pulse Excellent Agreement Laser Line Output Coupling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    A. A. AndronovSubmillimeter Wave Lasers in Semiconductors Using Hot Holes Academy of Sciences of USSR, Int of App. Phys., Gorky 1986. (This book contains over a hundred references on the p-Ge laser as of 1986.)Google Scholar
  2. 2.
    See special issue of Optical and Quantum Electronics25, (1993). (These papers represent current p-Ge work as of 1993).Google Scholar
  3. 3.
    S. A. Stoklitskiy “Quantum States Interaction in Hot Carrier Accumulation and Stimulated Emission Processes in p-Ge,” Semicond. Sci. Tech1, B610 (1992).Google Scholar
  4. 4.
    C. Kremser et al “Stimulated Emission from p-Ge due to Transitions between Light-hole Landau Levels and Excited States of Shallow Impurities,” Appl. Phys. Lett.60, 1785 (1992).Google Scholar
  5. 5.
    P. D. Coleman and C. Moe “Laser Mechanisms and Processes in the p-Ge Far IR Laser,” Int. Jour. of Infrared and MillimeterWaves14, 903 (1993).Google Scholar
  6. 6.
    A. A. Andronov et al “Stimulated Emission in the Long Wavelength IR Region form Hot Holes in Ge in Ē·¯B=0 Fields,” Pis'ma Zh. Ehsp. Theor. Fiz.40, 69 (1984).Google Scholar
  7. 7.
    F. Kielmann and Hanna Zuckermann “Transient Gain of the Germanuim Hot Hole Laser,” Opt Comm.109, 296 (1993).Google Scholar
  8. 8.
    R Till and F. Keilmann “Dynamics of the Low Energy Holes in Germanium,” Phys Rev B44, 1554 (1991).Google Scholar
  9. 9.
    F. Kielmann, V.N. Shastin and R. Till “Pulse Buildup of the Germanium Far-Infrared Laser” App. Phys Lett58, 2205 (1991).Google Scholar
  10. 10.
    F. Keilmann and R. Till “Nonlinear Far-Infrared Response of Passive and Actice Hole Systems in p-Ge,” Semicond. Sci Tech7, B633 (1992).Google Scholar
  11. 11.
    F. Keilmann and R. Till “Saturation spectroscopy of the p-Ge far-infrared laser,” Opt and Quan Elec.23 S231 (1991).Google Scholar
  12. 12.
    R. H. Pantell and H. E. PuthoffFundamentals of Quantum Electronics John Wiley and Sons, N. Y. 1969.Google Scholar
  13. 13.
    H. Statz and G. deMars “Transients and Oscillation Pulses in Masers,”Quantum Electronics Ed by C. H.Towns Columbia Univ Press, N.Y. 1960Google Scholar
  14. 14.
    A. A. Andronov et al “Tunable Hot Hole FIR Lasers and CR Masers,” Physica134B, 210 (1985).Google Scholar
  15. 15.
    A. H. Kahn “ Thoery of the Infrared Absorption of Carriers in Ge and Si,” Phys Rev97, 1647 (1955).Google Scholar
  16. 16.
    A. A. Andronov “Bragg selection in hot hole FIR lasers,” Opt. and Quan. Elec23, S205 (1991).Google Scholar
  17. 17.
    L. E. Vorob'ev “Population inversion and amplification of far-IR radiation at cyclotron resonance of heavy holes in germanium,” Pis'ma Zh. Eksp. Fiz.58, 868 (1994).Google Scholar
  18. 18.
    Yu. K. Pozhela et al. “Far infrared Absorption by Hot Holes in p-Ge under E ⊥ B Fields,” Phys. Stat. Sol. (b)128, 653 (1985).Google Scholar

Copyright information

© Plenum Publishing Corporation 1995

Authors and Affiliations

  • Paul D. Coleman
    • 1
  • Jonathan J. Wierer
    • 1
  1. 1.Electro-Physics Laboratory Department of Electrical and Computer EngineeringUniversity of IllinoisUrbana

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