Silicon as an advanced window material for high power gyrotrons
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The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated.
The dielectric data are given for the wide range of frequencies (30 – 330 GHz) and temperatures (30 – 330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.
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- 1.V.A. Flyagin, A.L.Goldenberg, and V.E. Zapevalov. Advanced Russian Gyrotrons for Plasma Investigations. The 19th Int. Conf. on IR and MM Waves. Japan, 1994, pp. 77–78.Google Scholar
- 2.M.Q.Tran at all. Feasibility of EU Home Team on the Manufacture of a Gyrotron for ECRH on ITER. The 19th Int. Conf. on IR & MM Waves. Japan, 1994, pp. 67–68.Google Scholar
- 3.H.Haefner, E.Bojarsky, K.Heckert, P.Norajitra, H.Reiser. Liquid nitrogen cooled window for high frequency plasma heating Journal of Nuclear Materials, 212–215, 1994, pp. 1035–1038.Google Scholar
- 4.A.Kasugai, K.Yokokura, K.Satamoto, M.Tsuneoka, T.Yamamoto, T.Imai, Y.Saito, K.Ito, T.Yoshiyuki, K.Ebisawa. High power tests of the cryogenic window for millimeter waves. Dig. 19th. Int. Conf. on IR & MM Waves, Sendai (J), 1994, JSAP Cat. Nr. AP941228, pp. 295–6.Google Scholar
- 5.P.B.Sushilin, A.Sh.Fix, V.V.Parshin. Perspectives of increasing the gyrotron output window capacity. "Gyrotrons" In. of Apl. Ph. Sc. A. USSR, Gorky, 1989, pp. 181–194.Google Scholar
- 6.B.M.Garin. Russian Conf. Dielectric-93, St. Petersburg, 1993.Google Scholar
- 7.M.N. Afsar, H. Chi. Millimeter wave complex refractive index, complex dielectric permittivity and loss tangent of extra high purity and compensated silicon, Int. J. of IR & MM Waves, 15(7), 1994, pp. 1181–1188.Google Scholar
- 8.R. Heidinger, A. Kumlin. Frequency and temperature dependence of the MM-wave dielectric properties of silicon with high d.c.resistivity. Digest of 14th Int. Conf. on IR & MM Waves. Florida, 1990. VSPIE, V.1576, pp. 274–278.Google Scholar
- 9.V.V. Parshin. Dielectric materials for gyrotron output windows. Int. J. of IR & MM Waves. Vol.15, N.2. 1994, pp. 339–348.Google Scholar
- 10.V.V. Parshin, V.N. Shastin. The non contactive technique for investigations of high purity semiconductors in MM range of wavelengths. Int. Symp. "Physics & Engineering of MM and SubMM Waves" Kharkov, Ukrane. vol.3, 1994, pp. 656–658.Google Scholar
- 11.R. Heidinger, A. Kumlin. The impact of extrinsic conductivity on the mm-wave dielectric loss in high resistivity silicon. Dig. 16th Int. Conf. of IR & MM Waves, Lausanne (CH), 1991, SPIE Vol. 1576, pp. 450–1.Google Scholar
- 12.Yu.A. Dryagin, V.V. Parshin. A metod to measure dielectric parameters in 5-0,5 MM wavelength band. Int. J. of IR & MM Waves. 1992, Vol. 13, N.7, pp. 1023–1032.Google Scholar
- 13.R. Heidinger, G. Link. Dielectric loss measurements between 25–300 K with a hemispherical Fabry-Perot resonator. Dig. 18th Int. Conf. of IR & MM Waves. Colchester (UK), 1993, SPIE V. 2104, pp. 64–65.Google Scholar
- 14.C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch. Solid-St. Electron. 1970, Vol. 13, p. 759.Google Scholar
- 15.B.A. Andreev, V.B. Ikonnikov, E.B. Kozlov, T.M. Lifshits, V.B. Shmagin. Materials Science Forum, V. 143-147. 1994, pp. 1365–1370.Google Scholar
- 16.D.V. Lang. J. Apply. Phys. V.45. N.7, 1974, pp. 3023–3032.Google Scholar
- 17.A.G. Milns. Deep impurities in semiconductors. New York, Wiley Interscience (1973).Google Scholar
- 18.J.Molla, A.Ibarra, R.Heidinger, E.R.Hodgson. Electron-irradiated silicon: An optimized material for gyrotron windows. J. of Nuclear Materials, 1994, in press.Google Scholar