Optical and Quantum Electronics

, Volume 18, Issue 2, pp 155–167 | Cite as

Power characteristics of high magnification semiconductor lasers

  • Lee W. Casperson
Article
Received:
Accepted:

Abstract

A formalism is described for calculating the output power of high-magnification curved-mirror semiconductor lasers. This model allows arbitrary single-pass gain and includes thez-dependent saturation by the expanding or contracting mode fields. The results are in agreement with recently published experimental data and the same techniques will apply to other types of high-loss resonators.

Keywords

Experimental Data Output Power Communication Network High Magnification Semiconductor Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Chapman and Hall Ltd 1986

Authors and Affiliations

  • Lee W. Casperson
    • 1
  1. 1.Department of Electrical EngineeringPortland State UniversityPortlandUSA

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