Growth of semiconductor layers in microgravity with slow cell rotation
Article
Received:
- 21 Downloads
- 1 Citations
Abstract
The hydrodynamical processes occurring during the growth of epitaxial layers of semiconductor material from the solution/melt are studied using mathematical simulation methods with a view to revealing the convective heat transfer effects on liquid epitaxy and finding possible ways of controlling them.
Keywords
Heat Transfer Fluid Dynamics Convective Heat Simulation Method Convective Heat Transfer
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Preview
Unable to display preview. Download preview PDF.
References
- 1.V. M. Andreev, L. M. Dolginov, and D. N. Tretyakov,Liquid-Phase Epitaxy in the Technology of Semiconductor Devices [in Russian], Sov. Radio, Moscow (1975).Google Scholar
- 2.A. Ya. Nashel'skii,Manufacture of Semiconducting Materials [in Russian], Metallurgiya, Moscow (1982).Google Scholar
- 3.K. Asakawa, Y. Torimoto, Y. Hayakawa, and M. Kumagawa, “Influence of solution convection on LPE InxGa1-xSb,”J. Crystal Growth,99, 1291 (1990).Google Scholar
- 4.M. Kimura, A. Tanaka, and T. Sukegawa, “Gravity effect on solute transport in dissolution and growth of silicon,”J. Crystal Growth,99, 1295 (1990).Google Scholar
- 5.N. A. Verezub and V. I. Polezhaev, “Simulation and control of heat/mass transfer in liquid-phase epitaxy,”Rost Kristallov,18, 173 (1990).Google Scholar
- 6.N. A. Verezub, É. S. Kopeliovich, V. I. Polezhaev, and V. V. Rakov, “Characteristic heat/mass transfer properties of the melts of some elementary semiconductors and compounds of theA 3 B 5 type in microgravity,” in:Technological Experiments in Microgravity [in Russian], Sverdlovsk (1983), p. 79.Google Scholar
- 7.V. I. Polezhaev, M. S. Bedlo, N. A. Verezub et al.,Convective Processes in Microgravity [in Russian], Nauka, Moscow (1991).Google Scholar
- 8.S. Kodama, Y. Suzuki, O. Ueda, and O. Ohtsuki, “GaAs solution growth experiment in microgravity,”J. Crystal Growth,99, 1287 (1990).Google Scholar
- 9.S. Kodama, Y. Suzuki, O. Ueda, and O. Ohtsuki, “Solution growth of GaAs crystal under microgravity,” in:Proc. VII European Symp. on Materials and Fluid Sci. in Microgravity. Oxford, UK, 1989, ESA SP-295 (1990), p. 23.Google Scholar
- 10.N. A. Verezub, “Study of heat/mass transfer during the production of semiconducting structures by the liquid-phase epitaxy method,” in:Hydromechanics and Heat/Mass Transfer in the Manufacture of Materials [in Russian], Nauka, Moscow (1990), p. 49.Google Scholar
- 11.S. S. Strel'chenko and V. V. Lebedev,The A 3 B 5 Compounds. A Handbook [in Russian], Metallurgiya, Moscow (1984).Google Scholar
- 12.V. I. Polezhaev, A. V. Buné, N. A. Verezub et al.,Mathematical Modeling of Convective Heat/Mass Transfer on the Basis of the Navier-Stokes Equations [in Russian], Nauka, Moscow, (1987).Google Scholar
- 13.S. Ya. Gertsenshtein and A. I. Rakhmanov, “Convection in a plane liquid layer rotating about a horizontal axis,”Dokl. Akad. Nauk SSSR,269, 561 (1983).Google Scholar
- 14.V. I. Polezhaev and M. K. Ermakov, “Thermal convection in microgravity during a slow rotation,” in:Microgravity Fluid Mechanics, Springer-Verlag, Berlin (1991), p. 253.Google Scholar
Copyright information
© Plenum Publishing Corporation 1995