Electrical properties of n-type CdSe single crystals prepared under a nitrogen pressure
Article
Received:
- 27 Downloads
- 3 Citations
Abstract
Single crystals of n-type CdSe were prepared from the melt at a pressure of about 100 atmospheres of nitrogen. The results ofϱ andRH measurements as a function of temperature are presented for the region of 160–1500°K. The activation energy of the donors and the width of the forbidden band as determined from the temperature dependence areɛD=(0.15±0.02) eV andEg=(1.88±0.03) eV respectively. For comparison the results of measurements carried out on crystals prepared in a vacuum are also mentioned.
Keywords
Nitrogen Atmosphere Activation Energy Electrical Property Nitrogen Pressure
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Preview
Unable to display preview. Download preview PDF.
References
- [1]Höschl P.: Čs. čas. fys. (to be published).Google Scholar
- [2]Libický A.: Proceedings of an International Conference on II–VI Semiconducting Compounds, Providence (1967), (in press).Google Scholar
- [3]Höschl P., Koňák Č.: Phys. Stat. Sol.9 (1965), 167.Google Scholar
- [4]Höschl P.: Thesis, Charles University, Prague (1966).Google Scholar
- [5]Burmeister D.: PhD Thesis, Stanford University (1965).Google Scholar
- [6]Di Domenico M., Anderson I. K.: Proc. IEEE52 (1964), 815.Google Scholar
- [7]Böer K. W., Boyn R., Geode O.: Phys. Stat. Sol.3 (1963), 1684.Google Scholar
Copyright information
© Academia, Nakladatelství Československé akademie 1968