Journal of thermal analysis

, Volume 34, Issue 5–6, pp 1311–1320 | Cite as

Measurement of the thermal impedance of laser diodes via thermal transients

  • W. Both
Article
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Abstract

The thermal impedance of laser diodes was determined by the measurement of thermal transients. The parameters of an equivalent R-C network were synthesized from the transient response. The network was compared with the real layer structure of the device. The effects of structure, mounting and aging on the temperature distribution were investigated with this method.

Keywords

Polymer Physical Chemistry Inorganic Chemistry Temperature Distribution Laser Diode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Zusammenfassung

Mittels Messung thermischer Einschwingvorgänge wurde die thermische Impedanz von Laserdioden bestimmt. Auf Grundlage des Sprungverhaltens wurden die Parameter eines äquivalentenR-C-Gliedes ermittelt, das mit der wahren Schichtenstruktur verglichen wurde. Mittels dieser Methode wurde der Einfluss von Struktur, Aufbau und Alterung auf die Temperaturverteilung untersucht.

РЕжУМЕ

пУтЕМ ИжМЕРЕНИь тЕРМ ИЧЕскИх пЕРЕхОДОВ Бы л ОпРЕДЕлЕН тЕРМИЧЕск ИИ ИМпЕДАНс лАжЕРНых ДИОДОВ. НА Ос НОВЕ пЕРЕхОДНОИ хАРА ктЕРИстИкИ БылИ сОстАВлЕНы пАРА МЕтРы кАкОИлИБО ЁкВИВАлЕНтНОИR-C цЕпИ, кОтОРАь БылА жАтЕМ сОпОстАВлЕНА с РЕАль НОИ слОИстОИ стРУктУРОИ УстРОИст ВА. ЁтИМ МЕтОДОМ БылО И жУЧЕНО ВлИьНИЕ стРУктУРы, сх ЕМы МОНтАжА А стАРЕНИь НА тЕМпЕРАт УРНОЕ РАспРЕДЕлЕНИЕ.

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Copyright information

© Wiley Heyden Ltd, Chichester and Akadémiai Kiadó, Budapest 1988

Authors and Affiliations

  • W. Both
    • 1
  1. 1.Central Institute of Optics and SpectroscopyAcademy of Sciences of the GDRBerlinDDR

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