Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

The modified Kaw's model based on rectangular voltage pulses for the calculation of the charge pumping current in mis transistors

  • 15 Accesses

Abstract

The charge pumping current results from recombination associated with the SiO2-Si interface traps under the gate of a MISFET when a voltage pulse is applied to the gate. The modified Kaw's model is proposed which predicts this current as a function of frequency, amplitude and average voltage of pulses with peak-to-peak amplitudes larger than the difference between the flatband and inversion voltages and with pulse transitions fast enough so that negligible capture or emission occurs during the transition. The presented modification of Kaw's model of the charge pumping effect enables to compute the dependences of the charge pumping current for various types of MIS transistors with different dimensions manufactured by different technologies.

This is a preview of subscription content, log in to check access.

References

  1. [1]

    Brugler J. S. and Jespers P. G. A.: IEEE Trans. on Electron DevicesED-16 (1989) 297.

  2. [2]

    Russell T. J., Wilson V. L., and Gaitan M.: IEEE Trans. on Electron DevicesED-30 (1983) 1662.

  3. [3]

    Groeseneken G., Maes H. E., Beltran N., and DeKeermaecker R. F.: IEEE Trans. on Electron DevicesED-31 (1984) 42.

  4. [4]

    Wachnik R. A. and Lowney J. R.: Solid State Electron.29 (1986) 447.

  5. [5]

    Kaw R. K.: Theory of charge pumping in MOS transistors (PhD. thesis). TH Eindhoven, Eindhoven, 1979.

  6. [6]

    Dejenfelt A. T.: IEEE Trans. on Electron Devices37 (1990) 1352.

  7. [7]

    Chong Ch. P. and Smith K. C.: IEEE ISCAS, 1989, Portland, Oregon, 1988.

  8. [8]

    Nissan-Cohen Y., Franz G. A., and Kwasnick R. F.: IEEE Electron Devices Lett.EDL-7 (1986) 451.

  9. [9]

    Toriumi A., Iwase M., and Yoshimi M.: IEEE Trans. on Electron Devices35 (1988) 999.

  10. [10]

    Heremans P., Groesenken G., and Maes H. E.:in Proc. Colloq. “Hot carrier degradation in short channel MOS”, London (U.K.), 1989. IEE, Digest No. 15, p. 2/1.

  11. [11]

    Wang C. T.:in Proc. 17th Biennial University/Government/Industry Microelectronics Symposium, New York, 1987. IEEE, p. 13.

  12. [12]

    Elliot A. B. M.: Solid State Electr.9 (1976) 437.

  13. [13]

    Soutschek E., Muller W., and Dorda G.: Appl. Phys. Lett.36 (1980) 437.

  14. [14]

    Orgoň M.: The investigation of the properties of MIS transistors (PhD. thesis). Slovak Techn. University, Bratislava, 1988.

  15. [15]

    Hulenyi L., Orgoň M., and Redhammer R.: Electrical Engineering J. (Bratislava)41 (1990) 169.

  16. [16]

    Heremans P., Bellens R., Groeseneken G., and Maes H. E.: IEEE Trans. on Electron DevicesED-32 (1988) 2194.

  17. [17]

    Bellens R. et al.:in 26th Annual Proc. Reliability Physics, Monterey, 1988. IEEE, p. 8.

  18. [18]

    Chung J., Jeng M., Moon J. E., Ko P. K., and Hu C.:in 27th Annual Proc. Reliability Physics, New York, 1989. IEEE, p. 92.

  19. [19]

    Chung J. E. and Muller R. S.: Solid State Electr.32 (1989) 867.

  20. [20]

    Seiwatz R. and Green M. J.: J. Appl. Phys.29 (1958) 1034.

  21. [21]

    Marciniak W.: MIS-type semiconductor components. SNTL, Praha, 1979 (in Czech).

  22. [22]

    Kireev P. S.: Semiconductor Physics. Vysshaya Shkola, Moscow, 1975 (in Russian).

  23. [23]

    Borchert B., Hofmann K. R., and Dorda G.: Electron. Lett.19 (1983) 746.

  24. [24]

    Schnermeyer F. L., Young C. R., and Sutton W. G.: IEEE Trans. on Electron DevicesED-24 (1977) 552.

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Orgoň, M., Breza, J., Partyk, B. et al. The modified Kaw's model based on rectangular voltage pulses for the calculation of the charge pumping current in mis transistors. Czech J Phys 44, 771–783 (1994). https://doi.org/10.1007/BF01700644

Download citation

Keywords

  • Recombination
  • Current Result
  • Voltage Pulse
  • Pulse Transition
  • Interface Trap