Photo-magnetic phenomenon in a semi-conductor in a non-homogeneous magnetic field
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Abstract
The emf which is produced on illuminating a homogeneous semiconductor located in a non-homogeneous magnetic field is calculated. It is shown that this emf is composed of two parts — bulk and boundary. Further, there are given the results of experiments carried out on indium antimonide by means of which the conclusions of the theory were verified.
Keywords
Magnetic Field Effective Mass InSb Current Carrier Homogeneous Field
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© Czechoslovak Academy of Sciences 1956