Czechoslovak Journal of Physics B

, Volume 30, Issue 3, pp 318–325 | Cite as

Degradation of DH lasers caused by growth of dislocation networks

  • T. Figielski
Article
Received:

Abstract

The features of the process of rapid degradation of (GaAl) As-GaAs DH lasers are discussed. The existing models for dislocation networks growth during the device operation are critically analysed. A new approach to the mechanism of degradation is proposed according to which the dislocation dipoles in the active layer of the device develop by conservative climb due to the pipe diffusion along helical dislocations.

Keywords

Active Layer Rapid Degradation Dislocation Network Device Operation Network Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Petroff P., Hartman R. L., J. Appl. Phys.45 (1974), 3899.Google Scholar
  2. [2]
    Hutchinson P. W., Dobson P. S., O'Hara S., Newman D. H., Appl. Phys. Lett.26 (1975), 250.Google Scholar
  3. [3]
    Dobson P. S.,Hutchinson P. W.,O'Hara S.,Newman D. H., Proc. 6th Intern. Symp. GaAs and Rel. Compounds, 1977, p. 400.Google Scholar
  4. [4]
    Ism M., Kan H., Susaki W., Nishiura H., Ogata Y., IEEE J. Quantum Electron.QE-13 (1977), 600.Google Scholar
  5. [5]
    Ishida K., Kamejima T., J. Electron. Mater.8 (1979), 57.Google Scholar
  6. [6]
    Saito H., Kawakami T., IEEE J. Quantum Electron.QE-13 (1977), 564.Google Scholar
  7. [7]
    Ishida K., Kamejima T., Matsui J., Appl. Phys. Lett.31 (1977), 397.Google Scholar
  8. [8]
    Monomar B., Woolhouse G. R., Appl. Phys. Lett.29 (1976), 605.Google Scholar
  9. [9]
    Petroff P. M., Kimerling L. C., Appl. Phys. Lett.29 (1976), 461.Google Scholar
  10. [10]
    Petroff P. M., J. Phys. (France), ColloqueC6 (1979), C6–201.Google Scholar
  11. [11]
    Lang D. V., Kimerling L. C., Appl. Phys. Lett.28 (1976), 248.Google Scholar
  12. [12]
    Matsui I., Ishida K., Naunichi Y., Jap. J. Appl. Phys.14 (1975), 1555.Google Scholar
  13. [13]
    Fujiwara T., Takagi N., Imai H., Komiya S., Takusagawa M., Takanashi H., Misugi T., IEEE J. Quantum Electron.QE-13 (1977), 616.Google Scholar
  14. [14]
    Hartman R. L., Hartman A. R., Appl. Phys. Lett.23 (1973), 469.Google Scholar
  15. [15]
    Kolakowski B., Appl. Phys. (to appear).Google Scholar
  16. [16]
    Predecki P., Statton W. O., J. Appl. Phys.37 (1966), 4053.Google Scholar

Copyright information

© Academia, Publishing House of the Czechoslovak Academy of Sciences 1980

Authors and Affiliations

  • T. Figielski
    • 1
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawPoland

Personalised recommendations