Czechoslovak Journal of Physics B

, Volume 23, Issue 3, pp 391–397 | Cite as

Thin SiO2 films on GaAs substrates

  • R. Fremunt
  • A. Šimeček
Article
Received:

Abstract

The formation of thin dielectric SiO2 films on n-type GaAs substrates and obtained results on the investigation of their physical and chemical parameters are described. The SiO2 films are produced by low-temperature deposition of tetraethoxisilane in the continuous flow system with argon as a carrier gas. Some of the technological aspects of this preparation (as the growth conditions and proper apparatus) are discussed in great detail. For improvement of some typical parameters (infrared spectra, etch rate and permitivity) a suitable thermal treatment is recommended. From the results we have achieved, the potential possibilities for construction of various types of electronic devices are also proposed.

Keywords

GaAs Thermal Treatment Infrared Spectrum Electronic Device Continuous Flow 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Academia, Publishing House of the Czechoslovak Academy of Sciences 1973

Authors and Affiliations

  • R. Fremunt
    • 1
  • A. Šimeček
    • 2
  1. 1.Institute of Radio Engineering and ElectronicsCzechosl. Acad. Sci., PraguePraha 8Czechoslovakia
  2. 2.Faculty of Nuclear and Physical EngineeringCzech Technical University, PraguePraha 1Czechoslovakia

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