Czechoslovak Journal of Physics B

, Volume 23, Issue 9, pp 931–946 | Cite as

Auger electron spectroscopy of silicon surfaces

  • B. Vlachová
Article
Received:

Abstract

The measurements of the spectra of Auger electrons of the silicon surfaces performed at the pressure of (2–5)×10−7 Torr are described. In this pressure range rapid oxidation and carbonization of the uppermost layers take place. The changes of characteristic energies in Auger and loss spectra are related to the change of chemical composition of the surface. The combination of the characteristic loss spectroscopy with Auger electron spectroscopy makes possible the determination of the chemical shifts. The measurements of the chemical shifts of the individual energy levels of the silicon atoms in both the pure and contaminated silicon surfaces, in quartz and Fe∶Si alloy are given. Finally, the possibilities and limitations of the heating for the silicon surface cleaning are examined.

Keywords

Oxidation Silicon Quartz Chemical Shift Energy Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Academia, Publishing House of the Czechoslovak Academy of Sciences 1973

Authors and Affiliations

  • B. Vlachová
    • 1
  1. 1.Institute of Scientific InstrumentsCzechosl. Acad. Sci.BrnoCzechoslovakia

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