In-situ monitoring of interface formation using the phase shift of reflection high-energy electron diffraction intensity oscillations
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Abstract
A novel phase shift of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during heterointerface formation allows direct monitoring of segragation at GaAs/Al x Ga1−xAs interfaces. The effect should be applicable to other materials systems as it is due to the reconfiguration of the surface structure at the heterointerface.
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68.35.Fx 61.14.Hg 64.75.+gPreview
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