Applied Physics A

, Volume 60, Issue 4, pp 403–409 | Cite as

Exchange coupling in multilayers with semiconductors

  • M. Landolt
  • B. Briner
Article
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Abstract

Intrinsic and heat-induced exchange coupling exists between ferromagnetic films separated by non-magnetic semiconducting spacer layers. Magnetic coupling across thin amorphous layers of Si, SiO, Ge and Ge/Si heterostructures is described. Antiferromagnetic coupling occurs in a limited thickness range for Si and Si/Ge heterostructures, and ferromagnetic coupling is found for SiO, Ge, and certain thicknesses of Si and Si/Ge heterostructures. The coupling strength is very weak, of the order of a few 10−6 J/m2. It exhibits a pronounced temperature dependence with a positive temperature coefficient for both ferro- and antiferromagnetic couplings. The observations indicate that resonant tunneling through defect states in the spacer material mediates the exchange coupling.

PACS

75.30. Et 75.70. Fr 73.40. Sx 
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References

  1. 1.
    P. Grünberg, R. Schreiber, Y. Pang, M.N. Brodsky, H. Sowers: Phys. Rev. Lett.57, 2442 (1986)Google Scholar
  2. 2.
    P. Bruno: J. Magn. Magn. Mater.121, 148 (1993)Google Scholar
  3. 2a.
    D.M. Edwards, J. Mathon, R.B. Muniz, M. Villeret, J.M. Ward: In NATO ASI Ser.B 309, 401 (Plenum, New York 1993) and references thereinGoogle Scholar
  4. 3.
    S. Toscano, B. Briner, H. Hopster, M. Landolt: J. Magn. Magn. Mater.114, L6 (1992)Google Scholar
  5. 4.
    E.E. Fullerton, J.E. Mattson, S.R. Lee, C.H. Sowers, Y.Y. Huang, G. Felcher, S.D. Bader: J. Magn. Magn. Mater.117, L306 (1992)Google Scholar
  6. 5.
    S. Toscano, B. Briner, M. Landolt: NATO ASI Ser. B309, 257 (Plenum, New York 1993); B. Briner, M. Landolt: Z. Phys. B97 (1995) (in press)Google Scholar
  7. 6.
    B. Briner, M. Landolt: Phys. Rev. Lett.73, 340 (1994)Google Scholar
  8. 7.
    J.E. Mattson, S. Kumar, E.E. Fullerton, S.R. Lee, C.H. Sowers, M. Grimsditch, S.D. Bader, F.T. Parker: Phys. Rev. Lett.71, 185 (1993)Google Scholar
  9. 8.
    B. Briner, M. Landolt: Z. Phys. B92, 137 (1993) ERRATUM: Z. Phys. B96, 291 (1994)Google Scholar
  10. 9.
    B. Briner, U. Ramsperger, M. Landolt: Phys. Rev. B51 (1995) (in press)Google Scholar
  11. 10.
    B. Briner: Magnetic exchange-coupling across amorphous semiconductors. Dissertation Nr. 10465, ETH Zürich (1994)Google Scholar
  12. 11.
    J.C. Slonczewski: Phys. Rev. Lett.67, 3172 (1991)Google Scholar
  13. 12.
    P. Bruno: Phys. Rev. B49, 13231 (1994)Google Scholar
  14. 13.
    M. Landolt: Appl. Phys. A41, 83 (1986)Google Scholar
  15. 14.
    H.C. Siegmann: J. Phys. Condens. Matter4, 8395 (1192)Google Scholar
  16. 14a.
    G. Schönhense, H.C. Siegmann: Ann. Phys.2, 465 (1993) and references thereinGoogle Scholar
  17. 15.
    We determine the coupling strength asJ=d Fe M s H comp, withd Fe=20 Å,M s=2.2 T, andH comp=15 OeGoogle Scholar
  18. 16.
    E. Holzenkämpfer, F.-W. Richter, J. Stuke, U. Voget-Grote: J. Non-Cryst. Solids32, 327 (1979)Google Scholar
  19. 16a.
    F.G. Bell, G. Ley: Phys. Rev. B37, 8383 (1988) T. Scimeca: Solid State Commun.77, 817 (1991)Google Scholar
  20. 17.
    M.L. Knotek, M. Pollak, T.M. Donovan, H. Kurtzman: Phys. Rev. Lett.30, 853 (1973)Google Scholar
  21. 18.
    M.L. Knotek: Solid State Commun.17, 1431 (1975)Google Scholar

Copyright information

© Springer-Verlag 1995

Authors and Affiliations

  • M. Landolt
    • 1
  • B. Briner
    • 1
  1. 1.Laboratorium für FestkörperphysikETH ZürichZürichSwitzerland

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