Zeitschrift für Physik B Condensed Matter

, Volume 78, Issue 2, pp 305–315 | Cite as

Mode-locking of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown

  • H. Naber
  • E. Schöll


The nonlinear dynamic behaviour of a model for self-generated, spatially coupled current oscillations in two separated parts of a semiconductor is analysed. The model involves impurity impact ionization, nonlinear energy relaxation of hot carriers, and energy exchange between the two subsystems. Quasiperiodicity and mode-locking are obtained, and characterized by a suitably defined rotation number and a spectral bifurcation diagram. The mode-locking structure is found to obey the Farey tree ordering, and can be understood on the basis of the circle map theory, assuming a particular path in the two-dimensional phase diagram of the circle map.


Bifurcation Diagram Impact Ionization Rotation Number Separate Part Energy Relaxation 
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Copyright information

© Springer-Verlag 1990

Authors and Affiliations

  • H. Naber
    • 1
  • E. Schöll
    • 2
  1. 1.Institut für Theoretische PhysikRWTH AachenAachenGermany
  2. 2.Institut für Theoretische PhysikTechnische Universität BerlinBerlin 12Germany

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