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Zeitschrift für Physik B Condensed Matter

, Volume 78, Issue 2, pp 305–315 | Cite as

Mode-locking of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown

  • H. Naber
  • E. Schöll
Article

Abstract

The nonlinear dynamic behaviour of a model for self-generated, spatially coupled current oscillations in two separated parts of a semiconductor is analysed. The model involves impurity impact ionization, nonlinear energy relaxation of hot carriers, and energy exchange between the two subsystems. Quasiperiodicity and mode-locking are obtained, and characterized by a suitably defined rotation number and a spectral bifurcation diagram. The mode-locking structure is found to obey the Farey tree ordering, and can be understood on the basis of the circle map theory, assuming a particular path in the two-dimensional phase diagram of the circle map.

Keywords

Bifurcation Diagram Impact Ionization Rotation Number Separate Part Energy Relaxation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1990

Authors and Affiliations

  • H. Naber
    • 1
  • E. Schöll
    • 2
  1. 1.Institut für Theoretische PhysikRWTH AachenAachenGermany
  2. 2.Institut für Theoretische PhysikTechnische Universität BerlinBerlin 12Germany

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