Refractories

, Volume 9, Issue 11–12, pp 723–726 | Cite as

Stability of silicon carbide to hydrofluoric, nitric, and sulfuric acids

  • N. I. Krasotkina
  • V. S. Yakovleva
  • N. I. Voronin
  • S. P. Shmitt-Fogelevich
Research
  • 241 Downloads

Conclusions

α-SiC is practically undecomposed by hydrofluoric acid and a mixture of hydrofluoric acid and sulfuric and nitric acids, regardless of grain size.

β-SiC is decomposed by hydrofluoric acid and a mixture of hydrofluoric acid and sulfuric and nitric acids. When the preparation temperature ofβ-SiC is decreased, its decomposition is enhanced. The greatest decomposition (30–55%) is exhibited byβ-SiC subjected to hydrofluoric acid containing sulfuric and nitric acids. The presence of impurities inβ-silicon carbide retards its decomposition by acids.

Keywords

Grain Size Silicon Carbide Sulfuric Acid Nitric Acid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    S.A. Dobrolezh et al., Silicon Carbide [in Russian], Izd. Tekhn. Literatury, Kiev (1963), p. 14.Google Scholar
  2. 2.
    U. D. Kingeri, Introduction to Ceramics [in Russian], Gosstroiizdat (1964), pp. 85–88.Google Scholar
  3. 3.
    N. E. Filonenko et al., Tr. VNIIASh, No. 3 (1966), p. 20.Google Scholar

Copyright information

© Consultants Bureau 1969

Authors and Affiliations

  • N. I. Krasotkina
    • 1
  • V. S. Yakovleva
    • 1
  • N. I. Voronin
    • 1
  • S. P. Shmitt-Fogelevich
    • 1
  1. 1.All-Union Institute of RefractoriesUSSR

Personalised recommendations